Abstract
The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport.
Original language | English |
---|---|
Pages (from-to) | 60-66 |
Number of pages | 7 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 82 |
DOIs | |
Publication status | Published - 2015 Jul |
Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2015 Elsevier Ltd. All rights reserved.
Keywords
- 2DEG
- Impedance spectroscopy
- Interface
- LaAlO/SrTiO
- Oxygen vacancies
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Condensed Matter Physics