The 2-dimensional electron gas (2DEG) at the LaAlO3/SrTiO3 heterointerface was analyzed using frequency-dependent impedance spectroscopy. The electrical conduction of 2DEG significantly influences the high-frequency impedance and induces dielectric amplification at low frequency regimes. The impedance responses obtained from the LaAlO3/SrTiO3 oxide was modeled using an equivalent circuit model. The frequency-dependent characterization used here does not necessitate the formation of ohmic contacts between the 2DEG layer and the adjacent electrodes. Through thermal bias-stress tests, the 2DEG conduction mechanism is proposed to partially originate from the oxygen vacancy-controlled defect concepts, indicating the controllability of 2DEG transport.
Bibliographical notePublisher Copyright:
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- Impedance spectroscopy
- Oxygen vacancies
ASJC Scopus subject areas
- General Chemistry
- General Materials Science
- Condensed Matter Physics