Implantation of N-ion on sapphire substrate for GaN epilayer

Young Ju Park; Yong Suk Cho; Eui Kwan Koh; Eun Kyu Kim; Gyeungho Kim; Dong Jin Byun; Suk Ki Min

doi:10.1109/IMNC.2001.984170

Implantation of N-ion on sapphire substrate for GaN epilayer

Young Ju Park, Yong Suk Cho, Eui Kwan Koh, Eun Kyu Kim, Gyeungho Kim, Dong Jin Byun, Suk Ki Min

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The main goal of this work is to minimize stress fields due to the mismatch in lattice constants and thermal expansion coefficients between GaN and sapphire by using the chemical and physical changes of the sapphire (0001) substrate. Effects of N⁺-implanted sapphire (0001) substrate on GaN epilayer by metal organic chemical vapor deposition (MOCVD) were investigated. It is our intention to examine the possibility of employing the N⁺-implantation treatment of the sapphire (0001) substrate to improve the properties of GaN epilayer grown by MOCVD.

Original language	English
Title of host publication	2001 International Microprocesses and Nanotechnology Conference, MNC 2001
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	222-223
Number of pages	2
ISBN (Print)	4891140178, 9784891140175
DOIs	https://doi.org/10.1109/IMNC.2001.984170
Publication status	Published - 2001
Event	International Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan Duration: 2001 Oct 31 → 2001 Nov 2

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2001
Country/Territory	Japan
City	Shimane
Period	01/10/31 → 01/11/2

ASJC Scopus subject areas

Biotechnology
Fluid Flow and Transfer Processes
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

Access to Document

10.1109/IMNC.2001.984170

Cite this

Park, YJ, Cho, YS, Koh, EK, Kim, EK, Kim, G, Byun, DJ & Min, SK 2001, Implantation of N-ion on sapphire substrate for GaN epilayer. in 2001 International Microprocesses and Nanotechnology Conference, MNC 2001., 984170, Institute of Electrical and Electronics Engineers Inc., pp. 222-223, International Microprocesses and Nanotechnology Conference, MNC 2001, Shimane, Japan, 01/10/31. https://doi.org/10.1109/IMNC.2001.984170

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abstract = "The main goal of this work is to minimize stress fields due to the mismatch in lattice constants and thermal expansion coefficients between GaN and sapphire by using the chemical and physical changes of the sapphire (0001) substrate. Effects of N+-implanted sapphire (0001) substrate on GaN epilayer by metal organic chemical vapor deposition (MOCVD) were investigated. It is our intention to examine the possibility of employing the N+-implantation treatment of the sapphire (0001) substrate to improve the properties of GaN epilayer grown by MOCVD.",

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year = "2001",

doi = "10.1109/IMNC.2001.984170",

language = "English",

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AU - Park, Young Ju

AU - Cho, Yong Suk

AU - Koh, Eui Kwan

AU - Kim, Eun Kyu

AU - Kim, Gyeungho

AU - Byun, Dong Jin

AU - Min, Suk Ki

PY - 2001

Y1 - 2001

N2 - The main goal of this work is to minimize stress fields due to the mismatch in lattice constants and thermal expansion coefficients between GaN and sapphire by using the chemical and physical changes of the sapphire (0001) substrate. Effects of N+-implanted sapphire (0001) substrate on GaN epilayer by metal organic chemical vapor deposition (MOCVD) were investigated. It is our intention to examine the possibility of employing the N+-implantation treatment of the sapphire (0001) substrate to improve the properties of GaN epilayer grown by MOCVD.

AB - The main goal of this work is to minimize stress fields due to the mismatch in lattice constants and thermal expansion coefficients between GaN and sapphire by using the chemical and physical changes of the sapphire (0001) substrate. Effects of N+-implanted sapphire (0001) substrate on GaN epilayer by metal organic chemical vapor deposition (MOCVD) were investigated. It is our intention to examine the possibility of employing the N+-implantation treatment of the sapphire (0001) substrate to improve the properties of GaN epilayer grown by MOCVD.

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SN - 4891140178

SN - 9784891140175

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BT - 2001 International Microprocesses and Nanotechnology Conference, MNC 2001

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - International Microprocesses and Nanotechnology Conference, MNC 2001

Y2 - 31 October 2001 through 2 November 2001

ER -

Implantation of N-ion on sapphire substrate for GaN epilayer

Abstract

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ASJC Scopus subject areas

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