Implantation of N ions on sapphire substrate for improvement of GaN epilayer

Yong Suk Cho, Junggeun Jhin, Young Ju Park, Sungchan Cho, Eui Kwan Koh, Eun Kyu Kim, Gyeungho Kim, Dongjin Byun, Suk Ki Min

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)


In an effort to improve the initial nucleation and crystal quality of the GaN epilayer, N-ion implantation on the sapphire (0001) substrate has been attempted. As a result of implantation with 55 keV nitrogen ions (N+), to a dose ranging from 1 × 1015 to 1 × 1017 cm-2, prior to GaN epilayer growth, the formation of a thin and disordered AlN phase was observed. The presence of the N-ion-implanted surface decreased internal free energies in the growth of the GaN epilayer, and the misfit strain was relieved to allow the formation of the AlN phase on the N-ion-implanted sapphire substrate. Through the estimation of the lattice strain value for GaN epilayers, it was confirmed that the reduction of strain was achieved with the N-ion-implanted surface with the ion dose of 1 × 1016 cm-2. The present results show that N-ion implantation of the sapphire (0001) surface can improve the properties of GaN epilayers grown by metalorganic chemical vapor deposition (MOCVD).

Original languageEnglish
Pages (from-to)4267-4270
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number6 B
Publication statusPublished - 2002 Jun
Externally publishedYes


  • Dislocations
  • GaN
  • Lattice strain
  • N-ion implantation

ASJC Scopus subject areas

  • General Engineering
  • General Physics and Astronomy


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