Abstract
In this article, we propose an integrate-and-fire (IF) neuron circuit using a single-gated silicon nanowire feedback field-effect transistor that utilizes a positive feedback loop. The IF operations are investigated through mixed-mode technology computer-aided design simulations. The neuron circuit composed of four component transistors (plus one capacitor) exhibits a high firing frequency of 20 kHz and low power and energy consumption of 7μW and 2.9× 10-15 J. The firing frequency and spiking voltage can be controlled through external biasing voltages. Our novel neuron circuit demonstrates a promising potential for use in spiking neural network hardware for very large-scale integration.
Original language | English |
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Article number | 9108609 |
Pages (from-to) | 2995-3000 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 67 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2020 Jul |
Bibliographical note
Publisher Copyright:© 1963-2012 IEEE.
Keywords
- Feedback field-effect transistors (FBFETs)
- TCAD simulation
- integrate-and-fire (IF) neuron
- positive feedback loop
- spiking neural networks (SNNs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering