@article{7e4dd5db5cdc4643bb62c0ad413d1b5a,
title = "Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor",
abstract = "In this article, we propose an integrate-and-fire (IF) neuron circuit using a single-gated silicon nanowire feedback field-effect transistor that utilizes a positive feedback loop. The IF operations are investigated through mixed-mode technology computer-aided design simulations. The neuron circuit composed of four component transistors (plus one capacitor) exhibits a high firing frequency of 20 kHz and low power and energy consumption of 7μW and 2.9× 10-15 J. The firing frequency and spiking voltage can be controlled through external biasing voltages. Our novel neuron circuit demonstrates a promising potential for use in spiking neural network hardware for very large-scale integration.",
keywords = "Feedback field-effect transistors (FBFETs), TCAD simulation, integrate-and-fire (IF) neuron, positive feedback loop, spiking neural networks (SNNs)",
author = "Sola Woo and Jinsun Cho and Doohyeok Lim and Park, {Young Soo} and Kyoungah Cho and Sangsig Kim",
note = "Funding Information: Manuscript received February 9, 2020; revised March 8, 2020 and April 26, 2020; accepted May 13, 2020. Date of publication June 4, 2020; date of current version June 19, 2020. This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) under Grant NRF-2016R1E1A1A02920171, in part by the Ministry of Trade, Industry & Energy (MOTIE, South Korea), in part by the Korea Semiconductor Research Consortium (KSRC) support program for development of the future semiconductor device, and in part by the Brain Korea 21 Plus Project in 2020. The review of this article was arranged by Editor T. Kim. (Corresponding author: Sangsig Kim.) Sola Woo, Doohyeok Lim, Young-Soo Park, and Kyoungah Cho are with the Department of Electrical Engineering, Korea University, Seoul 02841, South Korea. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",
year = "2020",
month = jul,
doi = "10.1109/TED.2020.2995785",
language = "English",
volume = "67",
pages = "2995--3000",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",
}