Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor

Sola Woo; Jinsun Cho; Doohyeok Lim; Young Soo Park; Kyoungah Cho; Sangsig Kim

doi:10.1109/TED.2020.2995785

Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor

Sola Woo, Jinsun Cho, Doohyeok Lim, Young Soo Park, Kyoungah Cho, Sangsig Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

In this article, we propose an integrate-and-fire (IF) neuron circuit using a single-gated silicon nanowire feedback field-effect transistor that utilizes a positive feedback loop. The IF operations are investigated through mixed-mode technology computer-aided design simulations. The neuron circuit composed of four component transistors (plus one capacitor) exhibits a high firing frequency of 20 kHz and low power and energy consumption of 7μW and 2.9× 10-15 J. The firing frequency and spiking voltage can be controlled through external biasing voltages. Our novel neuron circuit demonstrates a promising potential for use in spiking neural network hardware for very large-scale integration.

Original language	English
Article number	9108609
Pages (from-to)	2995-3000
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	67
Issue number	7
DOIs	https://doi.org/10.1109/TED.2020.2995785
Publication status	Published - 2020 Jul

Keywords

Feedback field-effect transistors (FBFETs)
TCAD simulation
integrate-and-fire (IF) neuron
positive feedback loop
spiking neural networks (SNNs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/TED.2020.2995785

Cite this

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title = "Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor",

abstract = "In this article, we propose an integrate-and-fire (IF) neuron circuit using a single-gated silicon nanowire feedback field-effect transistor that utilizes a positive feedback loop. The IF operations are investigated through mixed-mode technology computer-aided design simulations. The neuron circuit composed of four component transistors (plus one capacitor) exhibits a high firing frequency of 20 kHz and low power and energy consumption of 7μW and 2.9× 10-15 J. The firing frequency and spiking voltage can be controlled through external biasing voltages. Our novel neuron circuit demonstrates a promising potential for use in spiking neural network hardware for very large-scale integration.",

keywords = "Feedback field-effect transistors (FBFETs), TCAD simulation, integrate-and-fire (IF) neuron, positive feedback loop, spiking neural networks (SNNs)",

author = "Sola Woo and Jinsun Cho and Doohyeok Lim and Park, {Young Soo} and Kyoungah Cho and Sangsig Kim",

note = "Funding Information: Manuscript received February 9, 2020; revised March 8, 2020 and April 26, 2020; accepted May 13, 2020. Date of publication June 4, 2020; date of current version June 19, 2020. This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) under Grant NRF-2016R1E1A1A02920171, in part by the Ministry of Trade, Industry & Energy (MOTIE, South Korea), in part by the Korea Semiconductor Research Consortium (KSRC) support program for development of the future semiconductor device, and in part by the Brain Korea 21 Plus Project in 2020. The review of this article was arranged by Editor T. Kim. (Corresponding author: Sangsig Kim.) Sola Woo, Doohyeok Lim, Young-Soo Park, and Kyoungah Cho are with the Department of Electrical Engineering, Korea University, Seoul 02841, South Korea. Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

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doi = "10.1109/TED.2020.2995785",

language = "English",

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AU - Cho, Jinsun

AU - Lim, Doohyeok

AU - Park, Young Soo

AU - Cho, Kyoungah

AU - Kim, Sangsig

N1 - Funding Information: Manuscript received February 9, 2020; revised March 8, 2020 and April 26, 2020; accepted May 13, 2020. Date of publication June 4, 2020; date of current version June 19, 2020. This work was supported in part by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MSIP) under Grant NRF-2016R1E1A1A02920171, in part by the Ministry of Trade, Industry & Energy (MOTIE, South Korea), in part by the Korea Semiconductor Research Consortium (KSRC) support program for development of the future semiconductor device, and in part by the Brain Korea 21 Plus Project in 2020. The review of this article was arranged by Editor T. Kim. (Corresponding author: Sangsig Kim.) Sola Woo, Doohyeok Lim, Young-Soo Park, and Kyoungah Cho are with the Department of Electrical Engineering, Korea University, Seoul 02841, South Korea. Publisher Copyright: © 1963-2012 IEEE.

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Implementation and Characterization of an Integrate-and-Fire Neuron Circuit Using a Silicon Nanowire Feedback Field-Effect Transistor

Abstract

Keywords

ASJC Scopus subject areas

UN SDGs

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