Improved crystalline quality of GaN by substrate ion beam pre-treatment

Dong Jin Byun, Yong Suk Cho, Jaekyun Kim, Young Ju Park, Eun Kyu Kim, Gyeungho Kim, Eui Kwan Koh, Suk Ki Min

Research output: Chapter in Book/Report/Conference proceedingConference contribution


GaN growth was carried out on Al2O3(0001) which was ion beam pre-treated to reduce the stain and dislocation density in the film. The ion dose was fixed to 1×1016 ions/cm2 and the ion energy used was 800eV and 5.5keV. The 800eV ion beam was reactive N2 + ions and the 5.5keV ion beam was from a normal ion implanter. Both ion beam pretreatments resulted in the formation of a disordered amorphous phase on the substrate surface. The GaN buffer and main growth was carried out by MOCVD,the strain was monitored using Raman spectra and dislocations were observed by TEM. The Raman shift clearly showed that the strain in the film was decreased by ion beam pre-treatment of sapphire prior to GaN deposition. The defect density in the film was reduced by up to 55% with ion beam pretreatment.

Original languageEnglish
Title of host publication2001 International Microprocesses and Nanotechnology Conference, MNC 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)4891140178, 9784891140175
Publication statusPublished - 2001
EventInternational Microprocesses and Nanotechnology Conference, MNC 2001 - Shimane, Japan
Duration: 2001 Oct 312001 Nov 2


OtherInternational Microprocesses and Nanotechnology Conference, MNC 2001


  • GaN
  • ion beam treatment
  • Raman
  • TEM
  • XPS

ASJC Scopus subject areas

  • Biotechnology
  • Fluid Flow and Transfer Processes
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation


Dive into the research topics of 'Improved crystalline quality of GaN by substrate ion beam pre-treatment'. Together they form a unique fingerprint.

Cite this