Improved Dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes

Young Su Lee, Hong Goo Choi, Cheol Koo Hahn, Su Jin Kim, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We report on the electrical properties of AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with Ti/Al/Ti/Ni/Au multilayer ohmic electrodes on Si substrates. The specific contact resistance of the proposed electrode is as low as 8.8 × 10-7 Ωcm2, 5.7 times lower than that of the conventional Ti/Al/Ni/Au electrode. AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au ohmic electrodes show a high extrinsic transconductance of 104 mS/mm and a maximum current density of 346 mA/mm, which values are increased by 15.5% and 54%, respectively, as compared to those observed from the AlGaN/GaN HEMTs with Ti/Al/Ni/Au ohmic electrodes.

Original languageEnglish
Pages (from-to)1287-1290
Number of pages4
JournalJournal of the Korean Physical Society
Issue number41
Publication statusPublished - 2010 Apr 15


  • Dc performance
  • HEMTs
  • Improvement
  • Ohmic contact
  • Ti/Al/Ti/Ni/Au

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Improved Dc characteristics of AlGaN/GaN HEMTs with Ti/Al/Ti/Ni/Au electrode schemes'. Together they form a unique fingerprint.

Cite this