Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact

Dong Ho Kim; Su Jin Kim; Seung Hwan Kim; Tak Jeong; Sung Min Hwang; Tae Geun Kim

doi:10.1002/pssr.201105265

Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact

Dong Ho Kim
, Su Jin Kim
, Seung Hwan Kim
, Tak Jeong
, Sung Min Hwang
, Tae Geun Kim^*

^*Corresponding author for this work

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The authors report upon the increased light-output power (P_out) via a reduction in the forward voltage (V_f) for nonpolar a -plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10^-5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10^-4 Ω cm², after annealing at 700 °C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The V_f of the nonpolar LEDs decreases by 10% and P_out increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme.

Original language	English
Pages (from-to)	274-276
Number of pages	3
Journal	Physica Status Solidi - Rapid Research Letters
Volume	5
Issue number	8
DOIs	https://doi.org/10.1002/pssr.201105265
Publication status	Published - 2011 Aug

Keywords

Current injection
LED
Ni-Al alloys
Nonpolar GaN

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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10.1002/pssr.201105265

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@article{332e62a6219c4c77a5428bb7bd9a1000,

title = "Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact",

abstract = "The authors report upon the increased light-output power (Pout) via a reduction in the forward voltage (Vf) for nonpolar a -plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10-5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10-4 Ω cm2, after annealing at 700 °C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The Vf of the nonpolar LEDs decreases by 10\% and Pout increases by 15\% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme.",

keywords = "Current injection, LED, Ni-Al alloys, Nonpolar GaN",

author = "Kim, \{Dong Ho\} and Kim, \{Su Jin\} and Kim, \{Seung Hwan\} and Tak Jeong and Hwang, \{Sung Min\} and Kim, \{Tae Geun\}",

year = "2011",

month = aug,

doi = "10.1002/pssr.201105265",

language = "English",

volume = "5",

pages = "274--276",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "8",

}

TY - JOUR

T1 - Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact

AU - Kim, Dong Ho

AU - Kim, Su Jin

AU - Kim, Seung Hwan

AU - Jeong, Tak

AU - Hwang, Sung Min

AU - Kim, Tae Geun

PY - 2011/8

Y1 - 2011/8

N2 - The authors report upon the increased light-output power (Pout) via a reduction in the forward voltage (Vf) for nonpolar a -plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10-5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10-4 Ω cm2, after annealing at 700 °C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The Vf of the nonpolar LEDs decreases by 10% and Pout increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme.

AB - The authors report upon the increased light-output power (Pout) via a reduction in the forward voltage (Vf) for nonpolar a -plane GaN LEDs using Ni/Al/Ni/Au n-type ohmic contacts. The specific contact resistivity of the Ni/Al/Ni/Au contact is found to be as low as 5.6 × 10-5 whereas that of a typical Ti/Al/Ni/Au contact is 6.8 × 10-4 Ω cm2, after annealing at 700 °C. The X-ray photoelectron spectroscopy results show that the upward surface band bending is less pronounced for the Ni/Al contact compared to the Ti/Al contact, leading to a decrease in the effective Schottky barrier height (SBH). The Vf of the nonpolar LEDs decreases by 10% and Pout increases by 15% when the Ni/Al/Ni/Au scheme is used instead of the typical Ti/Al/Ni/Au metal scheme.

KW - Current injection

KW - LED

KW - Ni-Al alloys

KW - Nonpolar GaN

UR - https://www.scopus.com/pages/publications/79961080800

U2 - 10.1002/pssr.201105265

DO - 10.1002/pssr.201105265

M3 - Article

AN - SCOPUS:79961080800

SN - 1862-6254

VL - 5

SP - 274

EP - 276

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 8

ER -

Improved device performance in nonpolar a -plane GaN LEDs using a Ni/Al/Ni/Au n-type ohmic contact

Abstract

Keywords

ASJC Scopus subject areas

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