Improved dielectric properties of ZrO2-doped Ba 0.6Sr0.4TiO3 thin films deposited by reactive magnetron co-sputtering

Kwang Hwan Cho; Chong Yun Kang; Seok Jin Yoon; Young Pak Lee

doi:10.3938/jkps.53.2378

Improved dielectric properties of ZrO₂-doped Ba _0.6Sr_0.4TiO₃ thin films deposited by reactive magnetron co-sputtering

Kwang Hwan Cho, Chong Yun Kang, Seok Jin Yoon, Young Pak Lee

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

ZrO₂-doped (Ba_0.6Sr_0.4)TiO₃ (BST) thin films with different ZrO₂ contents were deposited on (100) LaAlO₃ substrates by reactive magnetron co-sputtering. The dielectric properties of the ZrO₂-doped BST thin films were measured using a symmetrical stripline resonator with shorted ends ranging from 1 to 3 GHz. We demonstrated that doping with ZrO₂ significantly improved the dielectric properties of the BST thin films. ZrO₂ doping successfully reduced the dielectric loss tangent (tan δ) from 9.2 × 10^-3 (pure BST) to 2.9 × 10^-3 (ZrO₂ doped BST). The results of this study showed that the BST films remained tunable in a range of 29 ∼ 42.7 %, which is sufficient for tunable microwave device applications. Consequently, ZrO₂ doping improved the figure of merit (K) for the films from K = 46.4 (pure BST) to K = 114.1 (ZrO₂-doped BST).

Original language	English
Pages (from-to)	2378-2381
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	53
Issue number	5 PART 1
DOIs	https://doi.org/10.3938/jkps.53.2378
Publication status	Published - 2008 Nov
Externally published	Yes

Keywords

Dielectric loss
Ferroelectric
Reactive co-sputtering
Tunable microwave device

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.3938/jkps.53.2378

Cite this

@article{7067c5f41ea8435682424161f61f1f25,

title = "Improved dielectric properties of ZrO2-doped Ba 0.6Sr0.4TiO3 thin films deposited by reactive magnetron co-sputtering",

abstract = "ZrO2-doped (Ba0.6Sr0.4)TiO3 (BST) thin films with different ZrO2 contents were deposited on (100) LaAlO3 substrates by reactive magnetron co-sputtering. The dielectric properties of the ZrO2-doped BST thin films were measured using a symmetrical stripline resonator with shorted ends ranging from 1 to 3 GHz. We demonstrated that doping with ZrO2 significantly improved the dielectric properties of the BST thin films. ZrO2 doping successfully reduced the dielectric loss tangent (tan δ) from 9.2 × 10-3 (pure BST) to 2.9 × 10-3 (ZrO2 doped BST). The results of this study showed that the BST films remained tunable in a range of 29 ∼ 42.7 %, which is sufficient for tunable microwave device applications. Consequently, ZrO2 doping improved the figure of merit (K) for the films from K = 46.4 (pure BST) to K = 114.1 (ZrO2-doped BST).",

keywords = "Dielectric loss, Ferroelectric, Reactive co-sputtering, Tunable microwave device",

author = "Cho, {Kwang Hwan} and Kang, {Chong Yun} and Yoon, {Seok Jin} and Lee, {Young Pak}",

year = "2008",

month = nov,

doi = "10.3938/jkps.53.2378",

language = "English",

volume = "53",

pages = "2378--2381",

journal = "Journal of the Korean Physical Society",

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T1 - Improved dielectric properties of ZrO2-doped Ba 0.6Sr0.4TiO3 thin films deposited by reactive magnetron co-sputtering

AU - Cho, Kwang Hwan

AU - Kang, Chong Yun

AU - Yoon, Seok Jin

AU - Lee, Young Pak

PY - 2008/11

Y1 - 2008/11

N2 - ZrO2-doped (Ba0.6Sr0.4)TiO3 (BST) thin films with different ZrO2 contents were deposited on (100) LaAlO3 substrates by reactive magnetron co-sputtering. The dielectric properties of the ZrO2-doped BST thin films were measured using a symmetrical stripline resonator with shorted ends ranging from 1 to 3 GHz. We demonstrated that doping with ZrO2 significantly improved the dielectric properties of the BST thin films. ZrO2 doping successfully reduced the dielectric loss tangent (tan δ) from 9.2 × 10-3 (pure BST) to 2.9 × 10-3 (ZrO2 doped BST). The results of this study showed that the BST films remained tunable in a range of 29 ∼ 42.7 %, which is sufficient for tunable microwave device applications. Consequently, ZrO2 doping improved the figure of merit (K) for the films from K = 46.4 (pure BST) to K = 114.1 (ZrO2-doped BST).

AB - ZrO2-doped (Ba0.6Sr0.4)TiO3 (BST) thin films with different ZrO2 contents were deposited on (100) LaAlO3 substrates by reactive magnetron co-sputtering. The dielectric properties of the ZrO2-doped BST thin films were measured using a symmetrical stripline resonator with shorted ends ranging from 1 to 3 GHz. We demonstrated that doping with ZrO2 significantly improved the dielectric properties of the BST thin films. ZrO2 doping successfully reduced the dielectric loss tangent (tan δ) from 9.2 × 10-3 (pure BST) to 2.9 × 10-3 (ZrO2 doped BST). The results of this study showed that the BST films remained tunable in a range of 29 ∼ 42.7 %, which is sufficient for tunable microwave device applications. Consequently, ZrO2 doping improved the figure of merit (K) for the films from K = 46.4 (pure BST) to K = 114.1 (ZrO2-doped BST).

KW - Dielectric loss

KW - Ferroelectric

KW - Reactive co-sputtering

KW - Tunable microwave device

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