Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance

Jun Hyuk Song; Joon Ho Oh; Jae Phil Shim; Jung Hong Min; Dong Seon Lee; Tae Yeon Seong

doi:10.1016/j.spmi.2012.05.002

Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance

Jun Hyuk Song, Joon Ho Oh, Jae Phil Shim, Jung Hong Min, Dong Seon Lee, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm ²) and fill factor (78.85%) as compared to those (0.65 mA/cm ² and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed.

Original language	English
Pages (from-to)	299-305
Number of pages	7
Journal	Superlattices and Microstructures
Volume	52
Issue number	2
DOIs	https://doi.org/10.1016/j.spmi.2012.05.002
Publication status	Published - 2012 Aug

Bibliographical note

Funding Information:
This work was supported by Energy Resource R&D Program (No. 20102010100020 ) under the Ministry of Knowledge Economy and the World Class University Program through the National Research Foundation of Korea funded by MEST ( R33-2008-000-10025-0 ).

Keywords

Cu-doped indium oxide
InGaN
Ohmic contact
Solar cell

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2012.05.002

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@article{6a2f48ed6d9d4852aad2f5d2b2f58977,

title = "Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance",

abstract = "We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm 2) and fill factor (78.85%) as compared to those (0.65 mA/cm 2 and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed.",

keywords = "Cu-doped indium oxide, InGaN, Ohmic contact, Solar cell",

author = "Song, {Jun Hyuk} and Oh, {Joon Ho} and Shim, {Jae Phil} and Min, {Jung Hong} and Lee, {Dong Seon} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by Energy Resource R&D Program (No. 20102010100020 ) under the Ministry of Knowledge Economy and the World Class University Program through the National Research Foundation of Korea funded by MEST ( R33-2008-000-10025-0 ).",

year = "2012",

month = aug,

doi = "10.1016/j.spmi.2012.05.002",

language = "English",

volume = "52",

pages = "299--305",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "2",

}

TY - JOUR

T1 - Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance

AU - Song, Jun Hyuk

AU - Oh, Joon Ho

AU - Shim, Jae Phil

AU - Min, Jung Hong

AU - Lee, Dong Seon

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by Energy Resource R&D Program (No. 20102010100020 ) under the Ministry of Knowledge Economy and the World Class University Program through the National Research Foundation of Korea funded by MEST ( R33-2008-000-10025-0 ).

PY - 2012/8

Y1 - 2012/8

N2 - We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm 2) and fill factor (78.85%) as compared to those (0.65 mA/cm 2 and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed.

AB - We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm 2) and fill factor (78.85%) as compared to those (0.65 mA/cm 2 and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed.

KW - Cu-doped indium oxide

KW - InGaN

KW - Ohmic contact

KW - Solar cell

UR - http://www.scopus.com/inward/record.url?scp=84861834558&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2012.05.002

DO - 10.1016/j.spmi.2012.05.002

M3 - Article

AN - SCOPUS:84861834558

SN - 0749-6036

VL - 52

SP - 299

EP - 305

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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