Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance

Jun Hyuk Song, Joon Ho Oh, Jae Phil Shim, Jung Hong Min, Dong Seon Lee, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


We report on the improvement in the performance of InGaN/GaN multi-quantum well-based solar cells by the introduction of a Cu-doped indium oxide (CIO) layer at the interface between indium tin oxide (ITO) p-electrode and p-GaN. The solar cell fabricated with the 3 nm-sample exhibits an external quantum efficiency of 29.8% (at a peak wavelength of 376 nm) higher than those (25.2%) of the cell with the ITO-only sample. The use of the 3-nm-thick CIO layer gives higher short circuit current density (0.72 mA/cm 2) and fill factor (78.85%) as compared to those (0.65 mA/cm 2 and 74.08%) of the ITO only sample. Measurements show that the conversion efficiency of the solar cells with the ITO-only sample and the 3 nm-sample is 1.12% and 1.30%, respectively. Based on their electrical and optical properties, the dependence of the CIO interlayer thickness on the efficiency of solar cells is discussed.

Original languageEnglish
Pages (from-to)299-305
Number of pages7
JournalSuperlattices and Microstructures
Issue number2
Publication statusPublished - 2012 Aug

Bibliographical note

Funding Information:
This work was supported by Energy Resource R&D Program (No. 20102010100020 ) under the Ministry of Knowledge Economy and the World Class University Program through the National Research Foundation of Korea funded by MEST ( R33-2008-000-10025-0 ).


  • Cu-doped indium oxide
  • InGaN
  • Ohmic contact
  • Solar cell

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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