Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer

Se Yeon Jung; Yoon Han Kim; Young Shik Kong; Tae Yeon Seong

doi:10.1016/j.spmi.2009.04.007

Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer

Se Yeon Jung, Yoon Han Kim, Young Shik Kong, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 ^{{ring operator}}C-annealed Ag/NiZn contacts give higher output power by ∼36% than those with the 400 ^{{ring operator}}C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts.

Original language	English
Pages (from-to)	578-584
Number of pages	7
Journal	Superlattices and Microstructures
Volume	46
Issue number	4
DOIs	https://doi.org/10.1016/j.spmi.2009.04.007
Publication status	Published - 2009 Oct

Bibliographical note

Funding Information:
This work was supported by Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant no. 2008-E-AP-HM-P-16-0000), the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-313-D00593), and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) through World Class University program (R33-2008-000-10025-0).

Keywords

Ag reflector
LED
NiZn capping layer
p-type Ohmic contact

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.spmi.2009.04.007

Cite this

@article{03929535c8d54ce69d4367c8877c739f,

title = "Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer",

abstract = "We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 {ring operator}C-annealed Ag/NiZn contacts give higher output power by ∼36% than those with the 400 {ring operator}C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts.",

keywords = "Ag reflector, LED, NiZn capping layer, p-type Ohmic contact",

author = "Jung, {Se Yeon} and Kim, {Yoon Han} and Kong, {Young Shik} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant no. 2008-E-AP-HM-P-16-0000), the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-313-D00593), and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) through World Class University program (R33-2008-000-10025-0).",

year = "2009",

month = oct,

doi = "10.1016/j.spmi.2009.04.007",

language = "English",

volume = "46",

pages = "578--584",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "4",

}

TY - JOUR

T1 - Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer

AU - Jung, Se Yeon

AU - Kim, Yoon Han

AU - Kong, Young Shik

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant no. 2008-E-AP-HM-P-16-0000), the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-313-D00593), and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) through World Class University program (R33-2008-000-10025-0).

PY - 2009/10

Y1 - 2009/10

N2 - We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 {ring operator}C-annealed Ag/NiZn contacts give higher output power by ∼36% than those with the 400 {ring operator}C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts.

AB - We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 {ring operator}C-annealed Ag/NiZn contacts give higher output power by ∼36% than those with the 400 {ring operator}C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts.

KW - Ag reflector

KW - LED

KW - NiZn capping layer

KW - p-type Ohmic contact

UR - http://www.scopus.com/inward/record.url?scp=70249086189&partnerID=8YFLogxK

U2 - 10.1016/j.spmi.2009.04.007

DO - 10.1016/j.spmi.2009.04.007

M3 - Article

AN - SCOPUS:70249086189

SN - 0749-6036

VL - 46

SP - 578

EP - 584

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 4

ER -

Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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