Improved electrical and thermal properties of Ag contacts for GaN-based flip-chip light-emitting diodes by using a NiZn alloy capping layer

Se Yeon Jung, Yoon Han Kim, Young Shik Kong, Tae Yeon Seong

    Research output: Contribution to journalArticlepeer-review

    8 Citations (Scopus)

    Abstract

    We investigate the effect of a 100 nm-thick NiZn alloy (10 wt% Zn) capping layer on the thermal and electrical properties of Ag reflectors (200 nm) for flip-chip light-emitting diodes (LEDs). It is shown that the introduction of the NiZn capping layer minimizes the formation of interfacial voids and surface agglomeration. Furthermore, LEDs fabricated with the NiZn-capping-layer-combined contacts produce better output power as compared to those with the Ag only reflectors. For example, the LEDs with the 400 {ring operator}C-annealed Ag/NiZn contacts give higher output power by ∼36% than those with the 400 {ring operator}C-annealed Ag only contacts. X-ray photoemission spectroscopy and Auger electron spectroscopy measurements are performed to understand the improved electrical properties of the LEDs fabricated with the NiZn-capping-layer-combined Ag contacts.

    Original languageEnglish
    Pages (from-to)578-584
    Number of pages7
    JournalSuperlattices and Microstructures
    Volume46
    Issue number4
    DOIs
    Publication statusPublished - 2009 Oct

    Bibliographical note

    Funding Information:
    This work was supported by Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant no. 2008-E-AP-HM-P-16-0000), the Korea Research Foundation Grant funded by the Korean Government (KRF-2008-313-D00593), and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korean government (MEST) through World Class University program (R33-2008-000-10025-0).

    Keywords

    • Ag reflector
    • LED
    • NiZn capping layer
    • p-type Ohmic contact

    ASJC Scopus subject areas

    • General Materials Science
    • Condensed Matter Physics
    • Electrical and Electronic Engineering

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