Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer

Jin Bok Lee; Sang Yong Jeong; Bong Jun Park; Chel Jong Choi; Kwon Hong; Sung Jin Whang; Tae Yeon Seong

doi:10.1016/j.spmi.2009.12.011

Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer

Jin Bok Lee
, Sang Yong Jeong
, Bong Jun Park
, Chel Jong Choi
, Kwon Hong
, Sung Jin Whang
, Tae Yeon Seong^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have investigated the effects of a NiCo interlayer on the electrical and thermal properties of nickel silicide as a function of the annealing temperature. For the interlayered samples, 3 nm-thick NiCo(10 at.% Co) films are electron-beam evaporated on Si substrates, on which 27 nm-thick Ni films are deposited without breaking the vacuum. It is shown that all the samples exhibit a distinctive increase in the sheet resistance at temperatures above 900 ^{{ring operator}}C. However, the NiCo interlayer sample produces the lowest sheet resistance at 900 ^\circC. X-ray diffraction results show that the Ni only and NiCo interlayer samples produce NiSi and NiSi₂ phases, while NiCo full samples give NiSi and Ni_1-xCo_xSi₂ phases. Scanning electron microscopy results exhibit that for all the samples, the surfaces become degraded with numerous arbitrarily-shaped spots, corresponding to areas uncovered by the silicides. The areal fractions of the silicides for the Ni only, NiCo full, and NiCo interlayer samples are about 57%, 72%, and 81%, respectively. The temperature dependence of the electrical properties of the silicide samples is explained in terms of the formation of resistive phases and the agglomeration of the silicide.

Original language	English
Pages (from-to)	259-265
Number of pages	7
Journal	Superlattices and Microstructures
Volume	47
Issue number	2
DOIs	https://doi.org/10.1016/j.spmi.2009.12.011
Publication status	Published - 2010 Feb

Bibliographical note

Funding Information:
This work was supported by Hynix semiconductor Inc. through Nanosemiconductor Engineering Program and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R33-2008-000-10025-0). One (CJC) of the authors was supported by the “Industrial Source Technology Development Programs (2009-F014-01)” of the Ministry of Knowledge Economy (MKE) of Korea.

Keywords

NiCo interlayer
Nickel silicide
Thermal stability

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.spmi.2009.12.011

Cite this

@article{b06ea4ce4da440c5b741e6f0d0cd635e,

title = "Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer",

abstract = "We have investigated the effects of a NiCo interlayer on the electrical and thermal properties of nickel silicide as a function of the annealing temperature. For the interlayered samples, 3 nm-thick NiCo(10 at.\% Co) films are electron-beam evaporated on Si substrates, on which 27 nm-thick Ni films are deposited without breaking the vacuum. It is shown that all the samples exhibit a distinctive increase in the sheet resistance at temperatures above 900 \{ring operator\}C. However, the NiCo interlayer sample produces the lowest sheet resistance at 900 \textbackslash{}circC. X-ray diffraction results show that the Ni only and NiCo interlayer samples produce NiSi and NiSi2 phases, while NiCo full samples give NiSi and Ni1-xCoxSi2 phases. Scanning electron microscopy results exhibit that for all the samples, the surfaces become degraded with numerous arbitrarily-shaped spots, corresponding to areas uncovered by the silicides. The areal fractions of the silicides for the Ni only, NiCo full, and NiCo interlayer samples are about 57\%, 72\%, and 81\%, respectively. The temperature dependence of the electrical properties of the silicide samples is explained in terms of the formation of resistive phases and the agglomeration of the silicide.",

keywords = "NiCo interlayer, Nickel silicide, Thermal stability",

author = "Lee, \{Jin Bok\} and Jeong, \{Sang Yong\} and Park, \{Bong Jun\} and Choi, \{Chel Jong\} and Kwon Hong and Whang, \{Sung Jin\} and Seong, \{Tae Yeon\}",

note = "Funding Information: This work was supported by Hynix semiconductor Inc. through Nanosemiconductor Engineering Program and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R33-2008-000-10025-0). One (CJC) of the authors was supported by the “Industrial Source Technology Development Programs (2009-F014-01)” of the Ministry of Knowledge Economy (MKE) of Korea.",

year = "2010",

month = feb,

doi = "10.1016/j.spmi.2009.12.011",

language = "English",

volume = "47",

pages = "259--265",

journal = "Superlattices and Microstructures",

issn = "0749-6036",

publisher = "Academic Press Inc.",

number = "2",

}

TY - JOUR

T1 - Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer

AU - Lee, Jin Bok

AU - Jeong, Sang Yong

AU - Park, Bong Jun

AU - Choi, Chel Jong

AU - Hong, Kwon

AU - Whang, Sung Jin

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by Hynix semiconductor Inc. through Nanosemiconductor Engineering Program and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R33-2008-000-10025-0). One (CJC) of the authors was supported by the “Industrial Source Technology Development Programs (2009-F014-01)” of the Ministry of Knowledge Economy (MKE) of Korea.

PY - 2010/2

Y1 - 2010/2

N2 - We have investigated the effects of a NiCo interlayer on the electrical and thermal properties of nickel silicide as a function of the annealing temperature. For the interlayered samples, 3 nm-thick NiCo(10 at.% Co) films are electron-beam evaporated on Si substrates, on which 27 nm-thick Ni films are deposited without breaking the vacuum. It is shown that all the samples exhibit a distinctive increase in the sheet resistance at temperatures above 900 {ring operator}C. However, the NiCo interlayer sample produces the lowest sheet resistance at 900 \circC. X-ray diffraction results show that the Ni only and NiCo interlayer samples produce NiSi and NiSi2 phases, while NiCo full samples give NiSi and Ni1-xCoxSi2 phases. Scanning electron microscopy results exhibit that for all the samples, the surfaces become degraded with numerous arbitrarily-shaped spots, corresponding to areas uncovered by the silicides. The areal fractions of the silicides for the Ni only, NiCo full, and NiCo interlayer samples are about 57%, 72%, and 81%, respectively. The temperature dependence of the electrical properties of the silicide samples is explained in terms of the formation of resistive phases and the agglomeration of the silicide.

AB - We have investigated the effects of a NiCo interlayer on the electrical and thermal properties of nickel silicide as a function of the annealing temperature. For the interlayered samples, 3 nm-thick NiCo(10 at.% Co) films are electron-beam evaporated on Si substrates, on which 27 nm-thick Ni films are deposited without breaking the vacuum. It is shown that all the samples exhibit a distinctive increase in the sheet resistance at temperatures above 900 {ring operator}C. However, the NiCo interlayer sample produces the lowest sheet resistance at 900 \circC. X-ray diffraction results show that the Ni only and NiCo interlayer samples produce NiSi and NiSi2 phases, while NiCo full samples give NiSi and Ni1-xCoxSi2 phases. Scanning electron microscopy results exhibit that for all the samples, the surfaces become degraded with numerous arbitrarily-shaped spots, corresponding to areas uncovered by the silicides. The areal fractions of the silicides for the Ni only, NiCo full, and NiCo interlayer samples are about 57%, 72%, and 81%, respectively. The temperature dependence of the electrical properties of the silicide samples is explained in terms of the formation of resistive phases and the agglomeration of the silicide.

KW - NiCo interlayer

KW - Nickel silicide

KW - Thermal stability

UR - https://www.scopus.com/pages/publications/73549100204

U2 - 10.1016/j.spmi.2009.12.011

DO - 10.1016/j.spmi.2009.12.011

M3 - Article

AN - SCOPUS:73549100204

SN - 0749-6036

VL - 47

SP - 259

EP - 265

JO - Superlattices and Microstructures

JF - Superlattices and Microstructures

IS - 2

ER -

Improved electrical and thermal properties of nickel silicides by using a NiCo interlayer

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this