Improved electrical performance of low-temperature-cured silver electrode for silicon heterojunction solar cells

Yuanming Li; Hee Soo Kim; Junsin Yi; Donghwan Kim; Joo Youl Huh

doi:10.1109/JPHOTOV.2018.2834955

Improved electrical performance of low-temperature-cured silver electrode for silicon heterojunction solar cells

Yuanming Li, Hee Soo Kim, Junsin Yi, Donghwan Kim, Joo Youl Huh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160-220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μ Ω·cm and specific contact resistance of 0.55 mΩ·cm² were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.

Original language	English
Pages (from-to)	969-975
Number of pages	7
Journal	IEEE Journal of Photovoltaics
Volume	8
Issue number	4
DOIs	https://doi.org/10.1109/JPHOTOV.2018.2834955
Publication status	Published - 2018 Jul

Bibliographical note

Funding Information:
Manuscript received March 12, 2018; revised May 3, 2018; accepted May 6, 2018. Date of publication May 28, 2018; date of current version June 19, 2018. This work was supported in part by the National Research Foundation of Korea and in part by the New & Renewable Energy Core Technology Program of Korea Institute of Energy Technology Evaluation and Planning under Grant 2017R1A2B3002980 and Grant 20143030011960 funded by the MSIT and MOTIE, respectively, of the Korea government. (Corresponding author: Joo-Youl Huh.) Y. Li, H.-S. Kim, D. Kim, and J.-Y. Huh are with the Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea (e-mail:, lym7499500@korea.ac.kr; turby36@korea.ac.kr; donghwan@korea. ac.kr; jyhuh@korea.ac.kr).

Publisher Copyright:
© 2011-2012 IEEE.

Keywords

Ag electrode
contact resistance
low-temperature-curing
microstructure
screen printing
silicon heterojunction (SHJ) solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JPHOTOV.2018.2834955

Cite this

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title = "Improved electrical performance of low-temperature-cured silver electrode for silicon heterojunction solar cells",

abstract = "To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160-220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μ Ω·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.",

keywords = "Ag electrode, contact resistance, low-temperature-curing, microstructure, screen printing, silicon heterojunction (SHJ) solar cell",

author = "Yuanming Li and Kim, {Hee Soo} and Junsin Yi and Donghwan Kim and Huh, {Joo Youl}",

note = "Funding Information: Manuscript received March 12, 2018; revised May 3, 2018; accepted May 6, 2018. Date of publication May 28, 2018; date of current version June 19, 2018. This work was supported in part by the National Research Foundation of Korea and in part by the New & Renewable Energy Core Technology Program of Korea Institute of Energy Technology Evaluation and Planning under Grant 2017R1A2B3002980 and Grant 20143030011960 funded by the MSIT and MOTIE, respectively, of the Korea government. (Corresponding author: Joo-Youl Huh.) Y. Li, H.-S. Kim, D. Kim, and J.-Y. Huh are with the Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea (e-mail:, lym7499500@korea.ac.kr; turby36@korea.ac.kr; donghwan@korea. ac.kr; jyhuh@korea.ac.kr). Publisher Copyright: {\textcopyright} 2011-2012 IEEE.",

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AU - Kim, Donghwan

AU - Huh, Joo Youl

N1 - Funding Information: Manuscript received March 12, 2018; revised May 3, 2018; accepted May 6, 2018. Date of publication May 28, 2018; date of current version June 19, 2018. This work was supported in part by the National Research Foundation of Korea and in part by the New & Renewable Energy Core Technology Program of Korea Institute of Energy Technology Evaluation and Planning under Grant 2017R1A2B3002980 and Grant 20143030011960 funded by the MSIT and MOTIE, respectively, of the Korea government. (Corresponding author: Joo-Youl Huh.) Y. Li, H.-S. Kim, D. Kim, and J.-Y. Huh are with the Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea (e-mail:, lym7499500@korea.ac.kr; turby36@korea.ac.kr; donghwan@korea. ac.kr; jyhuh@korea.ac.kr). Publisher Copyright: © 2011-2012 IEEE.

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N2 - To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160-220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μ Ω·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.

AB - To realize the high conversion efficiency potential of silicon heterojunction (SHJ) solar cells, it is crucial to minimize the series resistance by reducing the line resistivity and contact resistance of the Ag gridlines formed via low-temperature (<∼240 °C) curing. To reduce the resistivity and contact resistance of the screenprinted Ag gridlines on an indium tin oxide (ITO) layer, two strategies are utilized in this study: 1) the addition of Ag nanoparticles (NPs) into a low-temperature-curing polymer-based Ag paste for the resistivity and 2) the insertion of a thin Ag contact layer by inkjet printing between the screenprinted Ag gridline and the ITO layer for contact resistance. The effectiveness of these approaches was examined by curing the Ag gridlines at various temperatures in the range of 160-220 °C for 10 min. After curing at 200 °C, the low resistivity of 2.2 μ Ω·cm and specific contact resistance of 0.55 mΩ·cm2 were obtained by adding 20 wt.% of Ag NPs and inserting the inkjet-printed Ag contact layer, respectively. Microstructural analyses were also performed to correlate the outstanding electrical properties of the Ag gridlines.

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KW - microstructure

KW - screen printing

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Improved electrical performance of low-temperature-cured silver electrode for silicon heterojunction solar cells

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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