Improved electrostatic discharge protection in GaN-based vertical light-emitting diodes by an internal diode

Hwan Hee Jeong; Sang Youl Lee; Jung Hyeok Bae; Kwang Ki Choi; June O. Song; Sung Jin Son; Yong Hyun Lee; Tae Yeon Seong

doi:10.1109/LPT.2011.2106204

Improved electrostatic discharge protection in GaN-based vertical light-emitting diodes by an internal diode

Hwan Hee Jeong, Sang Youl Lee, Jung Hyeok Bae, Kwang Ki Choi, June O. Song, Sung Jin Son, Yong Hyun Lee, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar to that (3.40) of LEDs without the internal diode. It is shown that the output power of the LEDs with the internal diode is reduced by about 6% at 350 mA compared to reference LEDs without the internal diode. It is, however, further shown that the LEDs without the internal diode give a yield of 0% at the reverse voltages above 400 V, while the LEDs with the internal diode show a yield of ∼90% at reverse voltages of 2-4 kV.

Original language	English
Article number	5688221
Pages (from-to)	423-425
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	7
DOIs	https://doi.org/10.1109/LPT.2011.2106204
Publication status	Published - 2011

Bibliographical note

Funding Information:
Manuscript received November 08, 2010; revised December 27, 2010; accepted January 08, 2011. Date of publication January 13, 2011; date of current version March 16, 2011. This work was supported by LED Biz division of LG Innotek (LGIT) Co., Ltd. The work of T.-Y. Seong was supported by the World Class University program through the National Research Foundation of Korea funded by the MEST (R33-2008-000-10025-0) and by the Industrial Technology Development Program funded by MKE, Korea.

Keywords

Electrostatic discharge (ESD) protection
gallium nitride
vertical light-emitting diodes (LEDs)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2011.2106204

Cite this

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title = "Improved electrostatic discharge protection in GaN-based vertical light-emitting diodes by an internal diode",

abstract = "We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar to that (3.40) of LEDs without the internal diode. It is shown that the output power of the LEDs with the internal diode is reduced by about 6% at 350 mA compared to reference LEDs without the internal diode. It is, however, further shown that the LEDs without the internal diode give a yield of 0% at the reverse voltages above 400 V, while the LEDs with the internal diode show a yield of ∼90% at reverse voltages of 2-4 kV.",

keywords = "Electrostatic discharge (ESD) protection, gallium nitride, vertical light-emitting diodes (LEDs)",

author = "Jeong, {Hwan Hee} and Lee, {Sang Youl} and Bae, {Jung Hyeok} and Choi, {Kwang Ki} and Song, {June O.} and Son, {Sung Jin} and Lee, {Yong Hyun} and Seong, {Tae Yeon}",

note = "Funding Information: Manuscript received November 08, 2010; revised December 27, 2010; accepted January 08, 2011. Date of publication January 13, 2011; date of current version March 16, 2011. This work was supported by LED Biz division of LG Innotek (LGIT) Co., Ltd. The work of T.-Y. Seong was supported by the World Class University program through the National Research Foundation of Korea funded by the MEST (R33-2008-000-10025-0) and by the Industrial Technology Development Program funded by MKE, Korea.",

year = "2011",

doi = "10.1109/LPT.2011.2106204",

language = "English",

volume = "23",

pages = "423--425",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

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T1 - Improved electrostatic discharge protection in GaN-based vertical light-emitting diodes by an internal diode

AU - Jeong, Hwan Hee

AU - Lee, Sang Youl

AU - Bae, Jung Hyeok

AU - Choi, Kwang Ki

AU - Song, June O.

AU - Son, Sung Jin

AU - Lee, Yong Hyun

AU - Seong, Tae Yeon

N1 - Funding Information: Manuscript received November 08, 2010; revised December 27, 2010; accepted January 08, 2011. Date of publication January 13, 2011; date of current version March 16, 2011. This work was supported by LED Biz division of LG Innotek (LGIT) Co., Ltd. The work of T.-Y. Seong was supported by the World Class University program through the National Research Foundation of Korea funded by the MEST (R33-2008-000-10025-0) and by the Industrial Technology Development Program funded by MKE, Korea.

PY - 2011

Y1 - 2011

N2 - We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar to that (3.40) of LEDs without the internal diode. It is shown that the output power of the LEDs with the internal diode is reduced by about 6% at 350 mA compared to reference LEDs without the internal diode. It is, however, further shown that the LEDs without the internal diode give a yield of 0% at the reverse voltages above 400 V, while the LEDs with the internal diode show a yield of ∼90% at reverse voltages of 2-4 kV.

AB - We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar to that (3.40) of LEDs without the internal diode. It is shown that the output power of the LEDs with the internal diode is reduced by about 6% at 350 mA compared to reference LEDs without the internal diode. It is, however, further shown that the LEDs without the internal diode give a yield of 0% at the reverse voltages above 400 V, while the LEDs with the internal diode show a yield of ∼90% at reverse voltages of 2-4 kV.

KW - Electrostatic discharge (ESD) protection

KW - gallium nitride

KW - vertical light-emitting diodes (LEDs)

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DO - 10.1109/LPT.2011.2106204

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VL - 23

SP - 423

EP - 425

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

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ER -

Improved electrostatic discharge protection in GaN-based vertical light-emitting diodes by an internal diode

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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