Abstract
We first fabricated GaN-based vertical light-emitting diodes (LEDs) with electrostatic discharge (ESD) protection internal diode. Despite the reduced emitting area due to the internal diode, the LEDs with the internal diode give a forward voltage of 3.42 V at 350 mA similar to that (3.40) of LEDs without the internal diode. It is shown that the output power of the LEDs with the internal diode is reduced by about 6% at 350 mA compared to reference LEDs without the internal diode. It is, however, further shown that the LEDs without the internal diode give a yield of 0% at the reverse voltages above 400 V, while the LEDs with the internal diode show a yield of ∼90% at reverse voltages of 2-4 kV.
Original language | English |
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Article number | 5688221 |
Pages (from-to) | 423-425 |
Number of pages | 3 |
Journal | IEEE Photonics Technology Letters |
Volume | 23 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2011 |
Keywords
- Electrostatic discharge (ESD) protection
- gallium nitride
- vertical light-emitting diodes (LEDs)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering