Improved LDSE processing for the avoidance of overplating yielding 19.2% efficiency on commercial grade crystalline Si solar cell

Eunjoo Lee; Hyunwoo Lee; Junyoung Choi; Dongjun Oh; Jimyung Shim; Kyungyeun Cho; Jisun Kim; Soohong Lee; Brett Hallam; Stuart R. Wenham; Haeseok Lee

doi:10.1016/j.solmat.2011.07.030

Improved LDSE processing for the avoidance of overplating yielding 19.2% efficiency on commercial grade crystalline Si solar cell

Eunjoo Lee, Hyunwoo Lee, Junyoung Choi, Dongjun Oh, Jimyung Shim, Kyungyeun Cho, Jisun Kim, Soohong Lee, Brett Hallam, Stuart R. Wenham, Haeseok Lee

Research output: Contribution to journal › Article › peer-review

39 Citations (Scopus)

Abstract

A record in laser doped selective emitter (LDSE) solar cells with an efficiency η=19.2% is reported. In this study, we investigate the effect of SiN_x films for laser doped selective emitter solar cells with plated front contacts. It is observed that the condition of processes such as silicon nitride and laser doping (LD) is of critical importance prior to light induced plating. If these processes are not performed optimally, localized shunts may form during the light induced plating (LIP) process that then inhibit plating in the surrounding areas. In the previous work an efficiency of 18.3% has been achieved, even though the fill factor was only 74.2% and the cell suffered from additional shunting and shading losses due to overplating. However, in this work, we demonstrate that with the optimization of the PECVD SiN_x and metallization processes, cells have reached efficiencies of more than 19% on commercial grade p-type CZ Si substrates.

Original language	English
Pages (from-to)	3592-3595
Number of pages	4
Journal	Solar Energy Materials and Solar Cells
Volume	95
Issue number	12
DOIs	https://doi.org/10.1016/j.solmat.2011.07.030
Publication status	Published - 2011 Dec
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (no. 20093060010010-13-1-000 ).

Keywords

Laser doping
Plating
Selective emitter
Silicon
Solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solmat.2011.07.030

Cite this

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title = "Improved LDSE processing for the avoidance of overplating yielding 19.2% efficiency on commercial grade crystalline Si solar cell",

abstract = "A record in laser doped selective emitter (LDSE) solar cells with an efficiency η=19.2% is reported. In this study, we investigate the effect of SiNx films for laser doped selective emitter solar cells with plated front contacts. It is observed that the condition of processes such as silicon nitride and laser doping (LD) is of critical importance prior to light induced plating. If these processes are not performed optimally, localized shunts may form during the light induced plating (LIP) process that then inhibit plating in the surrounding areas. In the previous work an efficiency of 18.3% has been achieved, even though the fill factor was only 74.2% and the cell suffered from additional shunting and shading losses due to overplating. However, in this work, we demonstrate that with the optimization of the PECVD SiNx and metallization processes, cells have reached efficiencies of more than 19% on commercial grade p-type CZ Si substrates.",

keywords = "Laser doping, Plating, Selective emitter, Silicon, Solar cell",

author = "Eunjoo Lee and Hyunwoo Lee and Junyoung Choi and Dongjun Oh and Jimyung Shim and Kyungyeun Cho and Jisun Kim and Soohong Lee and Brett Hallam and Wenham, {Stuart R.} and Haeseok Lee",

note = "Funding Information: This work was supported by the New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (no. 20093060010010-13-1-000 ). ",

year = "2011",

month = dec,

doi = "10.1016/j.solmat.2011.07.030",

language = "English",

volume = "95",

pages = "3592--3595",

journal = "Solar Energy Materials and Solar Cells",

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AU - Lee, Eunjoo

AU - Lee, Hyunwoo

AU - Choi, Junyoung

AU - Oh, Dongjun

AU - Shim, Jimyung

AU - Cho, Kyungyeun

AU - Kim, Jisun

AU - Lee, Soohong

AU - Hallam, Brett

AU - Wenham, Stuart R.

AU - Lee, Haeseok

N1 - Funding Information: This work was supported by the New and Renewable Energy of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government Ministry of Knowledge Economy (no. 20093060010010-13-1-000 ).

PY - 2011/12

Y1 - 2011/12

N2 - A record in laser doped selective emitter (LDSE) solar cells with an efficiency η=19.2% is reported. In this study, we investigate the effect of SiNx films for laser doped selective emitter solar cells with plated front contacts. It is observed that the condition of processes such as silicon nitride and laser doping (LD) is of critical importance prior to light induced plating. If these processes are not performed optimally, localized shunts may form during the light induced plating (LIP) process that then inhibit plating in the surrounding areas. In the previous work an efficiency of 18.3% has been achieved, even though the fill factor was only 74.2% and the cell suffered from additional shunting and shading losses due to overplating. However, in this work, we demonstrate that with the optimization of the PECVD SiNx and metallization processes, cells have reached efficiencies of more than 19% on commercial grade p-type CZ Si substrates.

AB - A record in laser doped selective emitter (LDSE) solar cells with an efficiency η=19.2% is reported. In this study, we investigate the effect of SiNx films for laser doped selective emitter solar cells with plated front contacts. It is observed that the condition of processes such as silicon nitride and laser doping (LD) is of critical importance prior to light induced plating. If these processes are not performed optimally, localized shunts may form during the light induced plating (LIP) process that then inhibit plating in the surrounding areas. In the previous work an efficiency of 18.3% has been achieved, even though the fill factor was only 74.2% and the cell suffered from additional shunting and shading losses due to overplating. However, in this work, we demonstrate that with the optimization of the PECVD SiNx and metallization processes, cells have reached efficiencies of more than 19% on commercial grade p-type CZ Si substrates.

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KW - Plating

KW - Selective emitter

KW - Silicon

KW - Solar cell

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Improved LDSE processing for the avoidance of overplating yielding 19.2% efficiency on commercial grade crystalline Si solar cell

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

UN SDGs

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