Improved light extraction efficiency in GaN-based light emitting diodes

Jihyun Kim

doi:10.1007/978-3-642-23521-4_5

Improved light extraction efficiency in GaN-based light emitting diodes

Jihyun Kim

Research output: Chapter in Book/Report/Conference proceeding › Chapter

1 Citation (Scopus)

Abstract

The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field.

Original language	English
Title of host publication	GaN and ZnO-based Materials and Devices
Editors	Stephen Pearton
Pages	153-164
Number of pages	12
Edition	1
DOIs	https://doi.org/10.1007/978-3-642-23521-4_5
Publication status	Published - 2012

Publication series

Name	Springer Series in Materials Science
Number	1
Volume	156
ISSN (Print)	0933-033X

Bibliographical note

Funding Information:
The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the twenty-first Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea.

ASJC Scopus subject areas

General Materials Science

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10.1007/978-3-642-23521-4_5

Cite this

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title = "Improved light extraction efficiency in GaN-based light emitting diodes",

abstract = "The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field.",

author = "Jihyun Kim",

note = "Funding Information: The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the twenty-first Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea.",

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AU - Kim, Jihyun

N1 - Funding Information: The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the twenty-first Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea.

PY - 2012

Y1 - 2012

N2 - The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field.

AB - The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field.

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U2 - 10.1007/978-3-642-23521-4_5

DO - 10.1007/978-3-642-23521-4_5

M3 - Chapter

AN - SCOPUS:84870549374

SN - 9783642235207

T3 - Springer Series in Materials Science

SP - 153

EP - 164

BT - GaN and ZnO-based Materials and Devices

A2 - Pearton, Stephen

ER -

Improved light extraction efficiency in GaN-based light emitting diodes

Abstract

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Bibliographical note

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