Improved light extraction efficiency in GaN-based light emitting diodes

Jihyun Kim

    Research output: Chapter in Book/Report/Conference proceedingChapter

    1 Citation (Scopus)

    Abstract

    The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field.

    Original languageEnglish
    Title of host publicationGaN and ZnO-based Materials and Devices
    EditorsStephen Pearton
    Pages153-164
    Number of pages12
    Edition1
    DOIs
    Publication statusPublished - 2012

    Publication series

    NameSpringer Series in Materials Science
    Number1
    Volume156
    ISSN (Print)0933-033X

    Bibliographical note

    Funding Information:
    The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the twenty-first Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea.

    ASJC Scopus subject areas

    • General Materials Science

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