Abstract
The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field.
Original language | English |
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Title of host publication | GaN and ZnO-based Materials and Devices |
Editors | Stephen Pearton |
Pages | 153-164 |
Number of pages | 12 |
Edition | 1 |
DOIs | |
Publication status | Published - 2012 |
Publication series
Name | Springer Series in Materials Science |
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Number | 1 |
Volume | 156 |
ISSN (Print) | 0933-033X |
Bibliographical note
Funding Information:The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the twenty-first Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea.
ASJC Scopus subject areas
- General Materials Science