Improved light extraction efficiency in GaN-based light emitting diodes

Jihyun Kim

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

The improvement in light extraction efficiency (LEE) of GaN-based LEDs is one of the most important areas for increasing the external quantum efficiency for solid-state lighting applications. We summarize the advances in this field.

Original languageEnglish
Title of host publicationGaN and ZnO-based Materials and Devices
EditorsStephen Pearton
Pages153-164
Number of pages12
Edition1
DOIs
Publication statusPublished - 2012

Publication series

NameSpringer Series in Materials Science
Number1
Volume156
ISSN (Print)0933-033X

Bibliographical note

Funding Information:
The research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the twenty-first Century Frontier R&D Program funded by the Ministry of Education, Science and Technology of Korea.

ASJC Scopus subject areas

  • General Materials Science

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