Abstract
We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and nAl0.5In0.5P/DBR. However, the micro-LEDs with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and n-Al0.5In0.5P/DBR gave 61% and 125% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm2 of the micro-LEDs with n-Al0.5In0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.
Original language | English |
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Article number | 9019630 |
Pages (from-to) | 438-441 |
Number of pages | 4 |
Journal | IEEE Photonics Technology Letters |
Volume | 32 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2020 Apr 1 |
Keywords
- AlGaInP
- Micro-light emitting diode
- distributed bragg reflector
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering