Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

Sang Youl Lee, Ji Hyung Moon, Yong Tae Moon, Chung Song Kim, Sunwoo Park, Jeong Tak Oh, Hwan Hee Jeong, Tae Yeon Seong, Hiroshi Amano

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and nAl0.5In0.5P/DBR. However, the micro-LEDs with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and n-Al0.5In0.5P/DBR gave 61% and 125% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm2 of the micro-LEDs with n-Al0.5In0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.

Original languageEnglish
Article number9019630
Pages (from-to)438-441
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number7
Publication statusPublished - 2020 Apr 1


  • AlGaInP
  • Micro-light emitting diode
  • distributed bragg reflector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering


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