Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

Sang Youl Lee; Ji Hyung Moon; Yong Tae Moon; Chung Song Kim; Sunwoo Park; Jeong Tak Oh; Hwan Hee Jeong; Tae Yeon Seong; Hiroshi Amano

doi:10.1109/LPT.2020.2977376

Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

Sang Youl Lee, Ji Hyung Moon, Yong Tae Moon, Chung Song Kim, Sunwoo Park, Jeong Tak Oh, Hwan Hee Jeong, Tae Yeon Seong, Hiroshi Amano

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al_0.5In_0.5P/ n-Al_0.6Ga_0.4As and nAl_0.5In_0.5P/DBR. However, the micro-LEDs with n-Al_0.5In_0.5P/ n-Al_0.6Ga_0.4As and n-Al_0.5In_0.5P/DBR gave 61% and 125% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm² of the micro-LEDs with n-Al_0.5In_0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.

Original language	English
Article number	9019630
Pages (from-to)	438-441
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	32
Issue number	7
DOIs	https://doi.org/10.1109/LPT.2020.2977376
Publication status	Published - 2020 Apr 1

Keywords

AlGaInP
Micro-light emitting diode
distributed bragg reflector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2020.2977376

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@article{e6e1a50bb8314a948d584854db0990c4,

title = "Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector",

abstract = "We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and nAl0.5In0.5P/DBR. However, the micro-LEDs with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and n-Al0.5In0.5P/DBR gave 61% and 125% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm2 of the micro-LEDs with n-Al0.5In0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.",

keywords = "AlGaInP, Micro-light emitting diode, distributed bragg reflector",

author = "Lee, {Sang Youl} and Moon, {Ji Hyung} and Moon, {Yong Tae} and Kim, {Chung Song} and Sunwoo Park and Oh, {Jeong Tak} and Jeong, {Hwan Hee} and Seong, {Tae Yeon} and Hiroshi Amano",

note = "Funding Information: Manuscript received November 15, 2019; revised February 26, 2020; accepted February 26, 2020. Date of publication March 2, 2020; date of current version March 12, 2020. This work was supported in part by the Global Research Laboratory Program through the National Research Foundation (NRF) of South Korea funded by the Ministry of Science and ICT under Grant NRF-2017K1A1A2013160. (Corresponding author: Tae-Yeon Seong.) Sang-Youl Lee is with the Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea, and also with the Chip Development Group, LG Innotek, Paju 10842, South Korea. Funding Information: This work was supported in part by the Global Research Laboratory Program through the National Research Foundation (NRF) of South Korea funded by the Ministry of Science and ICT under Grant NRF-2017K1A1A2013160. Publisher Copyright: {\textcopyright} 1989-2012 IEEE.",

year = "2020",

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doi = "10.1109/LPT.2020.2977376",

language = "English",

volume = "32",

pages = "438--441",

journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

AU - Lee, Sang Youl

AU - Moon, Ji Hyung

AU - Moon, Yong Tae

AU - Kim, Chung Song

AU - Park, Sunwoo

AU - Oh, Jeong Tak

AU - Jeong, Hwan Hee

AU - Seong, Tae Yeon

AU - Amano, Hiroshi

N1 - Funding Information: Manuscript received November 15, 2019; revised February 26, 2020; accepted February 26, 2020. Date of publication March 2, 2020; date of current version March 12, 2020. This work was supported in part by the Global Research Laboratory Program through the National Research Foundation (NRF) of South Korea funded by the Ministry of Science and ICT under Grant NRF-2017K1A1A2013160. (Corresponding author: Tae-Yeon Seong.) Sang-Youl Lee is with the Department of Materials Science and Engineering, Korea University, Seoul 02841, South Korea, and also with the Chip Development Group, LG Innotek, Paju 10842, South Korea. Funding Information: This work was supported in part by the Global Research Laboratory Program through the National Research Foundation (NRF) of South Korea funded by the Ministry of Science and ICT under Grant NRF-2017K1A1A2013160. Publisher Copyright: © 1989-2012 IEEE.

PY - 2020/4/1

Y1 - 2020/4/1

N2 - We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and nAl0.5In0.5P/DBR. However, the micro-LEDs with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and n-Al0.5In0.5P/DBR gave 61% and 125% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm2 of the micro-LEDs with n-Al0.5In0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.

AB - We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and nAl0.5In0.5P/DBR. However, the micro-LEDs with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and n-Al0.5In0.5P/DBR gave 61% and 125% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm2 of the micro-LEDs with n-Al0.5In0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.

KW - AlGaInP

KW - Micro-light emitting diode

KW - distributed bragg reflector

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JF - IEEE Photonics Technology Letters

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ER -

Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

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Keywords

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