Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

Sang Youl Lee; Ji Hyung Moon; Yong Tae Moon; Chung Song Kim; Sunwoo Park; Jeong Tak Oh; Hwan Hee Jeong; Tae Yeon Seong; Hiroshi Amano

doi:10.1109/LPT.2020.2977376

Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

Sang Youl Lee
, Ji Hyung Moon
, Yong Tae Moon
, Chung Song Kim
, Sunwoo Park
, Jeong Tak Oh
, Hwan Hee Jeong
, Tae Yeon Seong^*
, Hiroshi Amano

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al_0.5In_0.5P/ n-Al_0.6Ga_0.4As and nAl_0.5In_0.5P/DBR. However, the micro-LEDs with n-Al_0.5In_0.5P/ n-Al_0.6Ga_0.4As and n-Al_0.5In_0.5P/DBR gave 61% and 125% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm² of the micro-LEDs with n-Al_0.5In_0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.

Original language	English
Article number	9019630
Pages (from-to)	438-441
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	32
Issue number	7
DOIs	https://doi.org/10.1109/LPT.2020.2977376
Publication status	Published - 2020 Apr 1

Bibliographical note

Publisher Copyright:
© 1989-2012 IEEE.

Keywords

AlGaInP
Micro-light emitting diode
distributed bragg reflector

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/LPT.2020.2977376

Cite this

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title = "Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector",

abstract = "We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9\% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and nAl0.5In0.5P/DBR. However, the micro-LEDs with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and n-Al0.5In0.5P/DBR gave 61\% and 125\% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm2 of the micro-LEDs with n-Al0.5In0.5P/DBR were degraded by 0.09\% and 6.33\%, respectively, with reference to those before annealing.",

keywords = "AlGaInP, Micro-light emitting diode, distributed bragg reflector",

author = "Lee, \{Sang Youl\} and Moon, \{Ji Hyung\} and Moon, \{Yong Tae\} and Kim, \{Chung Song\} and Sunwoo Park and Oh, \{Jeong Tak\} and Jeong, \{Hwan Hee\} and Seong, \{Tae Yeon\} and Hiroshi Amano",

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AU - Lee, Sang Youl

AU - Moon, Ji Hyung

AU - Moon, Yong Tae

AU - Kim, Chung Song

AU - Park, Sunwoo

AU - Oh, Jeong Tak

AU - Jeong, Hwan Hee

AU - Seong, Tae Yeon

AU - Amano, Hiroshi

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N2 - We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and nAl0.5In0.5P/DBR. However, the micro-LEDs with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and n-Al0.5In0.5P/DBR gave 61% and 125% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm2 of the micro-LEDs with n-Al0.5In0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.

AB - We investigated how the performance and reliability of AlGaInP-based red (620 nm) micro-light-emitting diodes (micro-LEDs) (25×17 μ m2) were influenced by the use of n-AlInP ohmic layer and distributed Bragg reflector (DBR). The AlGaAs-based DBR showed reflectivity of 94.9% at 622 nm with a 14 nm-stopband width. The micro-LEDs with n-GaAs gave slightly lower forward voltages by 0.013 - 0.021 V than those with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and nAl0.5In0.5P/DBR. However, the micro-LEDs with n-Al0.5In0.5P/ n-Al0.6Ga0.4As and n-Al0.5In0.5P/DBR gave 61% and 125% higher light output power at 20μ A compared with that with n-GaAs. It was shown that after annealing at 120 °C for 2,000 h, the forward voltage and the light output power at 4.7 A/cm2 of the micro-LEDs with n-Al0.5In0.5P/DBR were degraded by 0.09% and 6.33%, respectively, with reference to those before annealing.

KW - AlGaInP

KW - Micro-light emitting diode

KW - distributed bragg reflector

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Improved Light Output of AlGaInP-Based Micro-Light Emitting Diode Using Distributed Bragg Reflector

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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