Improved light output of GaN-based light-emitting diodes by using AgNi reflective contacts

Se Yeon Jung; Sang Youl Lee; June O. Song; Sungho Jin; Tae Yeon Seong

doi:10.1007/s11664-011-1745-3

Improved light output of GaN-based light-emitting diodes by using AgNi reflective contacts

Se Yeon Jung, Sang Youl Lee, June O. Song, Sungho Jin, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

Abstract

We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400°C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400°C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed.

Original language	English
Pages (from-to)	2173-2178
Number of pages	6
Journal	Journal of Electronic Materials
Volume	40
Issue number	11
DOIs	https://doi.org/10.1007/s11664-011-1745-3
Publication status	Published - 2011 Nov

Bibliographical note

Funding Information:
This work was supported by a Korea Research Foundation Grant funded by the Korean Government (KRF-2008-313-D00593), the World Class University program through the National Research Foundation of Korea funded by the MEST (R33-2008-000-10025-0), the Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant No. 2008-E-AP-HM-P-16-0000), and the Industrial Technology Development Program funded by the MKE, Korea.

Keywords

AgNi
Light-emitting diodes
Ohmic contact
Reflectivity

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-011-1745-3

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title = "Improved light output of GaN-based light-emitting diodes by using AgNi reflective contacts",

abstract = "We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400°C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400°C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed.",

keywords = "AgNi, Light-emitting diodes, Ohmic contact, Reflectivity",

author = "Jung, {Se Yeon} and Lee, {Sang Youl} and Song, {June O.} and Sungho Jin and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by a Korea Research Foundation Grant funded by the Korean Government (KRF-2008-313-D00593), the World Class University program through the National Research Foundation of Korea funded by the MEST (R33-2008-000-10025-0), the Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant No. 2008-E-AP-HM-P-16-0000), and the Industrial Technology Development Program funded by the MKE, Korea.",

year = "2011",

month = nov,

doi = "10.1007/s11664-011-1745-3",

language = "English",

volume = "40",

pages = "2173--2178",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

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AU - Jung, Se Yeon

AU - Lee, Sang Youl

AU - Song, June O.

AU - Jin, Sungho

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by a Korea Research Foundation Grant funded by the Korean Government (KRF-2008-313-D00593), the World Class University program through the National Research Foundation of Korea funded by the MEST (R33-2008-000-10025-0), the Manpower Development Program for Energy & Resources of the Ministry of Knowledge and Economy (Grant No. 2008-E-AP-HM-P-16-0000), and the Industrial Technology Development Program funded by the MKE, Korea.

PY - 2011/11

Y1 - 2011/11

N2 - We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400°C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400°C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed.

AB - We investigated the light output power of blue light-emitting diodes (LEDs) fabricated with AgNi contacts as a function of the Ni content. Annealing the AgNi contacts at 400°C in air significantly improved their electrical characteristics. The AgNi samples with 10.0 wt.% Ni showed reflectance of 80.9% at 460 nm, whereas the Ag-only contacts gave 71.1%. After annealing at 400°C, the AgNi contacts exhibited better thermal stability than did the Ag-only contacts. Their current-voltage relationships showed that blue LEDs fabricated with Ag-only contacts gave a forward voltage of 3.33 V at 20 mA, whereas those fabricated with AgNi contacts with 10.0 wt.% Ni produced 3.03 V. LEDs fabricated with the AgNi contacts exhibited output power higher by 5.9% to 19.1% than those with Ag-only contacts. Based on scanning electron microscopy and x-ray photoemission spectroscopy results, the improved thermal and electrical behaviors are described and discussed.

KW - AgNi

KW - Light-emitting diodes

KW - Ohmic contact

KW - Reflectivity

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ER -

Improved light output of GaN-based light-emitting diodes by using AgNi reflective contacts

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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