Improved light output power of GaN-based light emitting diodes by enhancing current spreading using single-wall carbon nanotubes

Se Yeon Jung; Kyeong Heon Kim; Sang Yong Jeong; Joon Woo Jeon; Jihyung Moon; Sang Youl Lee; June O. Song; Young Tae Byun; Tae Yeon Seong

doi:10.1149/1.3269189

Improved light output power of GaN-based light emitting diodes by enhancing current spreading using single-wall carbon nanotubes

Se Yeon Jung, Kyeong Heon Kim, Sang Yong Jeong, Joon Woo Jeon, Jihyung Moon, Sang Youl Lee, June O. Song, Young Tae Byun, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Single-wall carbon nanotubes (SWCNTs) have been combined with indium tin oxide (ITO) to improve the output power of GaN-based light emitting diodes (LEDs). LEDs fabricated with the SWCNT/ITO contacts give a forward voltage of 3.61 V at 350 mA, which is slightly higher than that of LEDs with ITO-only contacts. The SWCNT/ITO and ITO-only contacts produce transmittance values of 91.5 and 94.4% at 460 nm, respectively. However, LEDs with SWCNTs show a higher output power by 60% at 20 mA compared to those without SWCNTs. Photoemission microscope analyses show that the well-dispersed SWCNT bundle efficiently serves as a current spreader.

Original language	English
Pages (from-to)	H33-H35
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	2
DOIs	https://doi.org/10.1149/1.3269189
Publication status	Published - 2010

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3269189

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title = "Improved light output power of GaN-based light emitting diodes by enhancing current spreading using single-wall carbon nanotubes",

abstract = "Single-wall carbon nanotubes (SWCNTs) have been combined with indium tin oxide (ITO) to improve the output power of GaN-based light emitting diodes (LEDs). LEDs fabricated with the SWCNT/ITO contacts give a forward voltage of 3.61 V at 350 mA, which is slightly higher than that of LEDs with ITO-only contacts. The SWCNT/ITO and ITO-only contacts produce transmittance values of 91.5 and 94.4% at 460 nm, respectively. However, LEDs with SWCNTs show a higher output power by 60% at 20 mA compared to those without SWCNTs. Photoemission microscope analyses show that the well-dispersed SWCNT bundle efficiently serves as a current spreader.",

author = "Jung, {Se Yeon} and Kim, {Kyeong Heon} and Jeong, {Sang Yong} and Jeon, {Joon Woo} and Jihyung Moon and Lee, {Sang Youl} and Song, {June O.} and Byun, {Young Tae} and Seong, {Tae Yeon}",

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T1 - Improved light output power of GaN-based light emitting diodes by enhancing current spreading using single-wall carbon nanotubes

AU - Jung, Se Yeon

AU - Kim, Kyeong Heon

AU - Jeong, Sang Yong

AU - Jeon, Joon Woo

AU - Moon, Jihyung

AU - Lee, Sang Youl

AU - Song, June O.

AU - Byun, Young Tae

AU - Seong, Tae Yeon

PY - 2010

Y1 - 2010

N2 - Single-wall carbon nanotubes (SWCNTs) have been combined with indium tin oxide (ITO) to improve the output power of GaN-based light emitting diodes (LEDs). LEDs fabricated with the SWCNT/ITO contacts give a forward voltage of 3.61 V at 350 mA, which is slightly higher than that of LEDs with ITO-only contacts. The SWCNT/ITO and ITO-only contacts produce transmittance values of 91.5 and 94.4% at 460 nm, respectively. However, LEDs with SWCNTs show a higher output power by 60% at 20 mA compared to those without SWCNTs. Photoemission microscope analyses show that the well-dispersed SWCNT bundle efficiently serves as a current spreader.

AB - Single-wall carbon nanotubes (SWCNTs) have been combined with indium tin oxide (ITO) to improve the output power of GaN-based light emitting diodes (LEDs). LEDs fabricated with the SWCNT/ITO contacts give a forward voltage of 3.61 V at 350 mA, which is slightly higher than that of LEDs with ITO-only contacts. The SWCNT/ITO and ITO-only contacts produce transmittance values of 91.5 and 94.4% at 460 nm, respectively. However, LEDs with SWCNTs show a higher output power by 60% at 20 mA compared to those without SWCNTs. Photoemission microscope analyses show that the well-dispersed SWCNT bundle efficiently serves as a current spreader.

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Improved light output power of GaN-based light emitting diodes by enhancing current spreading using single-wall carbon nanotubes

Abstract

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