Improved light output power of ultraviolet GaN-based light-emitting diode by using AGPDCU reflector

Kee Baek Sim; Su Jung Yoon; Tae Yeon Seong

doi:10.1149/08905.0027ecst

Improved light output power of ultraviolet GaN-based light-emitting diode by using AGPDCU reflector

Kee Baek Sim, Su Jung Yoon, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We investigated the output performance of UV LEDs with Ag-Pd-Cu (APC) and Ag-only reflectors. After annealing at 600°C, the Ag-only layer surface was seriously roughened, while the APC sample revealed a smooth surface with hillocks. The 600 °C-annealed APC and Ag samples gave reflectance of 84.9% and 70.9%at 385 nm. The contact resistivities of the 500 °C-annealed Ag and APC contacts were measured to be 2.59×10^-4 and 1.85×10^-4 cm², respectively. For the annealed APC sample, the Ga 2p core level was shifted towards the lower binding-energies by 0.67 eV as compared to that of the as-deposited sample. The UV LEDs with the annealed APC reflector yielded 9.04% higher output at 100 mA than those with the Ag reflector. Based on the XRD pole figure and SEM results, the better thermal property of the APC sample is described in terms of thermal stress and surface energy.

Original language	English
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 20
Editors	S. Jang, V. Chakrapani, J. Zavada, T. J. Anderson, J. Hite, E. Douglas
Publisher	Electrochemical Society Inc.
Pages	27-33
Number of pages	7
Edition	5
ISBN (Electronic)	9781607688662, 9781607688686, 9781607688693, 9781607688709, 9781607688709, 9781607688716, 9781607688723
DOIs	https://doi.org/10.1149/08905.0027ecst
Publication status	Published - 2019
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 20 - 235th ECS Meeting - Dallas, United States Duration: 2019 May 26 → 2019 May 30

Publication series

Name	ECS Transactions
Number	5
Volume	89
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Wide Bandgap Semiconductor Materials and Devices 20 - 235th ECS Meeting
Country/Territory	United States
City	Dallas
Period	19/5/26 → 19/5/30

Bibliographical note

Funding Information:
This work was supported by the Global Research Laboratory (GRL) program through the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT (NRF-2017K1A1A2013160).

Publisher Copyright:
© The Electrochemical Society

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/08905.0027ecst

Cite this

Sim, K. B., Yoon, S. J., & Seong, T. Y. (2019). Improved light output power of ultraviolet GaN-based light-emitting diode by using AGPDCU reflector. In S. Jang, V. Chakrapani, J. Zavada, T. J. Anderson, J. Hite, & E. Douglas (Eds.), Wide Bandgap Semiconductor Materials and Devices 20 (5 ed., pp. 27-33). (ECS Transactions; Vol. 89, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/08905.0027ecst

Improved light output power of ultraviolet GaN-based light-emitting diode by using AGPDCU reflector. / Sim, Kee Baek; Yoon, Su Jung; Seong, Tae Yeon.
Wide Bandgap Semiconductor Materials and Devices 20. ed. / S. Jang; V. Chakrapani; J. Zavada; T. J. Anderson; J. Hite; E. Douglas. 5. ed. Electrochemical Society Inc., 2019. p. 27-33 (ECS Transactions; Vol. 89, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sim, KB, Yoon, SJ & Seong, TY 2019, Improved light output power of ultraviolet GaN-based light-emitting diode by using AGPDCU reflector. in S Jang, V Chakrapani, J Zavada, TJ Anderson, J Hite & E Douglas (eds), Wide Bandgap Semiconductor Materials and Devices 20. 5 edn, ECS Transactions, no. 5, vol. 89, Electrochemical Society Inc., pp. 27-33, Symposium on Wide Bandgap Semiconductor Materials and Devices 20 - 235th ECS Meeting, Dallas, United States, 19/5/26. https://doi.org/10.1149/08905.0027ecst

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abstract = "We investigated the output performance of UV LEDs with Ag-Pd-Cu (APC) and Ag-only reflectors. After annealing at 600°C, the Ag-only layer surface was seriously roughened, while the APC sample revealed a smooth surface with hillocks. The 600 °C-annealed APC and Ag samples gave reflectance of 84.9% and 70.9%at 385 nm. The contact resistivities of the 500 °C-annealed Ag and APC contacts were measured to be 2.59×10-4 and 1.85×10-4 cm2, respectively. For the annealed APC sample, the Ga 2p core level was shifted towards the lower binding-energies by 0.67 eV as compared to that of the as-deposited sample. The UV LEDs with the annealed APC reflector yielded 9.04% higher output at 100 mA than those with the Ag reflector. Based on the XRD pole figure and SEM results, the better thermal property of the APC sample is described in terms of thermal stress and surface energy.",

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N1 - Funding Information: This work was supported by the Global Research Laboratory (GRL) program through the National Research Foundation (NRF) of Korea funded by the Ministry of Science and ICT (NRF-2017K1A1A2013160). Publisher Copyright: © The Electrochemical Society

PY - 2019

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N2 - We investigated the output performance of UV LEDs with Ag-Pd-Cu (APC) and Ag-only reflectors. After annealing at 600°C, the Ag-only layer surface was seriously roughened, while the APC sample revealed a smooth surface with hillocks. The 600 °C-annealed APC and Ag samples gave reflectance of 84.9% and 70.9%at 385 nm. The contact resistivities of the 500 °C-annealed Ag and APC contacts were measured to be 2.59×10-4 and 1.85×10-4 cm2, respectively. For the annealed APC sample, the Ga 2p core level was shifted towards the lower binding-energies by 0.67 eV as compared to that of the as-deposited sample. The UV LEDs with the annealed APC reflector yielded 9.04% higher output at 100 mA than those with the Ag reflector. Based on the XRD pole figure and SEM results, the better thermal property of the APC sample is described in terms of thermal stress and surface energy.

AB - We investigated the output performance of UV LEDs with Ag-Pd-Cu (APC) and Ag-only reflectors. After annealing at 600°C, the Ag-only layer surface was seriously roughened, while the APC sample revealed a smooth surface with hillocks. The 600 °C-annealed APC and Ag samples gave reflectance of 84.9% and 70.9%at 385 nm. The contact resistivities of the 500 °C-annealed Ag and APC contacts were measured to be 2.59×10-4 and 1.85×10-4 cm2, respectively. For the annealed APC sample, the Ga 2p core level was shifted towards the lower binding-energies by 0.67 eV as compared to that of the as-deposited sample. The UV LEDs with the annealed APC reflector yielded 9.04% higher output at 100 mA than those with the Ag reflector. Based on the XRD pole figure and SEM results, the better thermal property of the APC sample is described in terms of thermal stress and surface energy.

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Improved light output power of ultraviolet GaN-based light-emitting diode by using AGPDCU reflector

Abstract

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Bibliographical note

ASJC Scopus subject areas

Access to Document

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