Abstract
AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB 2/Ti/Au source/drain Ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB 2/Au or Ni/TiB 2/Au) and subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au Ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based Ohmic metal and either Pt/Au, Ni/Au or Ni/TiB 2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C.
Original language | English |
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Pages (from-to) | 379-383 |
Number of pages | 5 |
Journal | Journal of Electronic Materials |
Volume | 36 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2007 Apr |
Externally published | Yes |
Bibliographical note
Funding Information:The work at UF is partially funded by Air Force Research Laboratory under contract number FA 8650–04–2–1619, monitored by T. Dalrymple and also by AFOSR, F49620–03–1–0370, by ARO DAAD19–01–1–0603, the Army Research Laboratory, AFOSR (F49620–02–1–0366 and F49620–03– 1–0370), NSF(CTS–0301178, monitored by Dr. M. Burka and Dr. D. Senich), (DMR 0400416, Dr.L. Hess). Research at Korea University was supported by a Korea University Grant Fund. Research at the Naval Research Lab is supported by Office of Naval Research.
Keywords
- Contacts
- GaN
- High electron mobility transistor
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry