Improved long-term thermal stability at 350°C of TiB 2-based Ohmic contacts on AlGaN/GaN high electron mobility transistors

Rohit Khanna; L. Stafford; S. J. Pearton; T. J. Anderson; F. Ren; I. I. Kravchenko; Amir Dabiran; A. Osinsky; Joon Yeob Lee; Kwan Young Lee; Jihyun Kim

doi:10.1007/s11664-006-0036-x

Improved long-term thermal stability at 350°C of TiB ₂-based Ohmic contacts on AlGaN/GaN high electron mobility transistors

Rohit Khanna, L. Stafford, S. J. Pearton, T. J. Anderson, F. Ren, I. I. Kravchenko, Amir Dabiran, A. Osinsky, Joon Yeob Lee, Kwan Young Lee, Jihyun Kim

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB ₂/Ti/Au source/drain Ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB ₂/Au or Ni/TiB ₂/Au) and subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au Ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based Ohmic metal and either Pt/Au, Ni/Au or Ni/TiB ₂/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C.

Original language	English
Pages (from-to)	379-383
Number of pages	5
Journal	Journal of Electronic Materials
Volume	36
Issue number	4
DOIs	https://doi.org/10.1007/s11664-006-0036-x
Publication status	Published - 2007 Apr
Externally published	Yes

Keywords

Contacts
GaN
High electron mobility transistor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1007/s11664-006-0036-x

Cite this

Khanna, R., Stafford, L., Pearton, S. J., Anderson, T. J., Ren, F., Kravchenko, I. I., Dabiran, A., Osinsky, A., Lee, J. Y., Lee, K. Y., & Kim, J. (2007). Improved long-term thermal stability at 350°C of TiB ₂-based Ohmic contacts on AlGaN/GaN high electron mobility transistors. Journal of Electronic Materials, 36(4), 379-383. https://doi.org/10.1007/s11664-006-0036-x

@article{6e9c9dddf5d547d1988ab7a4eb8902d9,

title = "Improved long-term thermal stability at 350°C of TiB 2-based Ohmic contacts on AlGaN/GaN high electron mobility transistors",

abstract = "AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB 2/Ti/Au source/drain Ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB 2/Au or Ni/TiB 2/Au) and subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au Ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based Ohmic metal and either Pt/Au, Ni/Au or Ni/TiB 2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C.",

keywords = "Contacts, GaN, High electron mobility transistor",

author = "Rohit Khanna and L. Stafford and Pearton, {S. J.} and Anderson, {T. J.} and F. Ren and Kravchenko, {I. I.} and Amir Dabiran and A. Osinsky and Lee, {Joon Yeob} and Lee, {Kwan Young} and Jihyun Kim",

note = "Funding Information: The work at UF is partially funded by Air Force Research Laboratory under contract number FA 8650–04–2–1619, monitored by T. Dalrymple and also by AFOSR, F49620–03–1–0370, by ARO DAAD19–01–1–0603, the Army Research Laboratory, AFOSR (F49620–02–1–0366 and F49620–03– 1–0370), NSF(CTS–0301178, monitored by Dr. M. Burka and Dr. D. Senich), (DMR 0400416, Dr.L. Hess). Research at Korea University was supported by a Korea University Grant Fund. Research at the Naval Research Lab is supported by Office of Naval Research.",

year = "2007",

month = apr,

doi = "10.1007/s11664-006-0036-x",

language = "English",

volume = "36",

pages = "379--383",

journal = "Journal of Electronic Materials",

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T1 - Improved long-term thermal stability at 350°C of TiB 2-based Ohmic contacts on AlGaN/GaN high electron mobility transistors

AU - Khanna, Rohit

AU - Stafford, L.

AU - Pearton, S. J.

AU - Anderson, T. J.

AU - Ren, F.

AU - Kravchenko, I. I.

AU - Dabiran, Amir

AU - Osinsky, A.

AU - Lee, Joon Yeob

AU - Lee, Kwan Young

AU - Kim, Jihyun

N1 - Funding Information: The work at UF is partially funded by Air Force Research Laboratory under contract number FA 8650–04–2–1619, monitored by T. Dalrymple and also by AFOSR, F49620–03–1–0370, by ARO DAAD19–01–1–0603, the Army Research Laboratory, AFOSR (F49620–02–1–0366 and F49620–03– 1–0370), NSF(CTS–0301178, monitored by Dr. M. Burka and Dr. D. Senich), (DMR 0400416, Dr.L. Hess). Research at Korea University was supported by a Korea University Grant Fund. Research at the Naval Research Lab is supported by Office of Naval Research.

PY - 2007/4

Y1 - 2007/4

N2 - AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB 2/Ti/Au source/drain Ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB 2/Au or Ni/TiB 2/Au) and subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au Ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based Ohmic metal and either Pt/Au, Ni/Au or Ni/TiB 2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C.

AB - AlGaN/GaN High Electron Mobility Transistors (HEMTs) were fabricated with Ti/Al/TiB 2/Ti/Au source/drain Ohmic contacts and a variety of gate metal schemes (Pt/Au, Ni/Au, Pt/TiB 2/Au or Ni/TiB 2/Au) and subjected to long-term annealing at 350°C. By comparison with companion devices with conventional Ti/Al/Pt/Au Ohmic contacts and Pt/Au gate contacts, the HEMTs with boride-based Ohmic metal and either Pt/Au, Ni/Au or Ni/TiB 2/Au gate metal showed superior stability of both source-drain current and transconductance after 25 days aging at 350°C.

KW - Contacts

KW - GaN

KW - High electron mobility transistor

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DO - 10.1007/s11664-006-0036-x

M3 - Article

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