Improved long-term thermal stability at 350°C of TiB 2-based Ohmic contacts on AlGaN/GaN high electron mobility transistors

  • Rohit Khanna*
  • , L. Stafford
  • , S. J. Pearton
  • , T. J. Anderson
  • , F. Ren
  • , I. I. Kravchenko
  • , Amir Dabiran
  • , A. Osinsky
  • , Joon Yeob Lee
  • , Kwan Young Lee
  • , Jihyun Kim
    • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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