Improved materials for MOVPE growth of GaSb and InSb

R. M. Graham; A. C. Jones; N. J. Mason; S. Rushworth; A. Salesse; T. Y. Seong; G. Booker; L. Smith; P. J. Walker

doi:10.1088/0268-1242/8/10/002

Improved materials for MOVPE growth of GaSb and InSb

R. M. Graham, A. C. Jones, N. J. Mason, S. Rushworth, A. Salesse, T. Y. Seong, G. Booker, L. Smith, P. J. Walker

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

Some factors affecting the MOVPE growth of GaSb and InSb and structures based on these materials and their alloys are investigated. Trimethylantimony (TMSb) and tertiarybutyldimethylantimony (TBDMSb) have been synthesized and assessed by growing bulk layers of GaSb and InSb. The use of TBDMSb has allowed the growth of InSb at 400 degrees C as compared with 450 degrees C using TMSb. all the alkyls used have had their pyrolysis kinetics determined under real growth conditions using in situ ultraviolet spectroscopy. A thorough study of the initial nucleation of GaSb onto GaAs substrates has been performed using atomic force microscopy (AFM), TEM (cross-sectional and plan view) and quasi-elastic light scattering (QLS). Bulk layers of GaSb have been grown using optimized and non-optimized buffer layers to assess the effect on optical, structural and electrical properties of the grown layers.

Original language	English
Article number	002
Pages (from-to)	1797-1802
Number of pages	6
Journal	Semiconductor Science and Technology
Volume	8
Issue number	10
DOIs	https://doi.org/10.1088/0268-1242/8/10/002
Publication status	Published - 1993
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/8/10/002

Cite this

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title = "Improved materials for MOVPE growth of GaSb and InSb",

abstract = "Some factors affecting the MOVPE growth of GaSb and InSb and structures based on these materials and their alloys are investigated. Trimethylantimony (TMSb) and tertiarybutyldimethylantimony (TBDMSb) have been synthesized and assessed by growing bulk layers of GaSb and InSb. The use of TBDMSb has allowed the growth of InSb at 400 degrees C as compared with 450 degrees C using TMSb. all the alkyls used have had their pyrolysis kinetics determined under real growth conditions using in situ ultraviolet spectroscopy. A thorough study of the initial nucleation of GaSb onto GaAs substrates has been performed using atomic force microscopy (AFM), TEM (cross-sectional and plan view) and quasi-elastic light scattering (QLS). Bulk layers of GaSb have been grown using optimized and non-optimized buffer layers to assess the effect on optical, structural and electrical properties of the grown layers.",

author = "Graham, {R. M.} and Jones, {A. C.} and Mason, {N. J.} and S. Rushworth and A. Salesse and Seong, {T. Y.} and G. Booker and L. Smith and Walker, {P. J.}",

year = "1993",

doi = "10.1088/0268-1242/8/10/002",

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TY - JOUR

T1 - Improved materials for MOVPE growth of GaSb and InSb

AU - Graham, R. M.

AU - Jones, A. C.

AU - Mason, N. J.

AU - Rushworth, S.

AU - Salesse, A.

AU - Seong, T. Y.

AU - Booker, G.

AU - Smith, L.

AU - Walker, P. J.

PY - 1993

Y1 - 1993

N2 - Some factors affecting the MOVPE growth of GaSb and InSb and structures based on these materials and their alloys are investigated. Trimethylantimony (TMSb) and tertiarybutyldimethylantimony (TBDMSb) have been synthesized and assessed by growing bulk layers of GaSb and InSb. The use of TBDMSb has allowed the growth of InSb at 400 degrees C as compared with 450 degrees C using TMSb. all the alkyls used have had their pyrolysis kinetics determined under real growth conditions using in situ ultraviolet spectroscopy. A thorough study of the initial nucleation of GaSb onto GaAs substrates has been performed using atomic force microscopy (AFM), TEM (cross-sectional and plan view) and quasi-elastic light scattering (QLS). Bulk layers of GaSb have been grown using optimized and non-optimized buffer layers to assess the effect on optical, structural and electrical properties of the grown layers.

AB - Some factors affecting the MOVPE growth of GaSb and InSb and structures based on these materials and their alloys are investigated. Trimethylantimony (TMSb) and tertiarybutyldimethylantimony (TBDMSb) have been synthesized and assessed by growing bulk layers of GaSb and InSb. The use of TBDMSb has allowed the growth of InSb at 400 degrees C as compared with 450 degrees C using TMSb. all the alkyls used have had their pyrolysis kinetics determined under real growth conditions using in situ ultraviolet spectroscopy. A thorough study of the initial nucleation of GaSb onto GaAs substrates has been performed using atomic force microscopy (AFM), TEM (cross-sectional and plan view) and quasi-elastic light scattering (QLS). Bulk layers of GaSb have been grown using optimized and non-optimized buffer layers to assess the effect on optical, structural and electrical properties of the grown layers.

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DO - 10.1088/0268-1242/8/10/002

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AN - SCOPUS:0027683982

SN - 0268-1242

VL - 8

SP - 1797

EP - 1802

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 10

M1 - 002

ER -

Improved materials for MOVPE growth of GaSb and InSb

Abstract

ASJC Scopus subject areas

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