Improved performance in charge-trap-type flash memories with an Al 2O3 dielectric by using bandgap engineering of charge-trapping layers

Yu Jeong Seo; Ho Myoung An; Hee Dong Kim; Tae Geun Kim

doi:10.3938/jkps.55.2689

Improved performance in charge-trap-type flash memories with an Al ₂O₃ dielectric by using bandgap engineering of charge-trapping layers

Yu Jeong Seo, Ho Myoung An, Hee Dong Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A band-engineered configuration of the new polycrystalline Si/Al ₂O₃/Si₃N₄/SiO₂/Si (SANOS) device structure with a non-uniform nitride composition is proposed for high-density flash memories. The dramatic improvement can be attributed to the charge trapping efficiency, the data retention and the cycling endurance performance. The SANOS device designed in this paper holds promise for applications to next-generation charge-trap memory devices.

Original language	English
Pages (from-to)	2689-2692
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	6 PART. 1
DOIs	https://doi.org/10.3938/jkps.55.2689
Publication status	Published - 2009 Dec

Keywords

ANO
Bandgap engineering
SANOS
Si-rich

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.3938/jkps.55.2689

Cite this

@article{bc975a93c6af455c91981132bdaedc16,

title = "Improved performance in charge-trap-type flash memories with an Al 2O3 dielectric by using bandgap engineering of charge-trapping layers",

abstract = "A band-engineered configuration of the new polycrystalline Si/Al 2O3/Si3N4/SiO2/Si (SANOS) device structure with a non-uniform nitride composition is proposed for high-density flash memories. The dramatic improvement can be attributed to the charge trapping efficiency, the data retention and the cycling endurance performance. The SANOS device designed in this paper holds promise for applications to next-generation charge-trap memory devices.",

keywords = "ANO, Bandgap engineering, SANOS, Si-rich",

author = "Seo, {Yu Jeong} and An, {Ho Myoung} and Kim, {Hee Dong} and Kim, {Tae Geun}",

year = "2009",

month = dec,

doi = "10.3938/jkps.55.2689",

language = "English",

volume = "55",

pages = "2689--2692",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "6 PART. 1",

}

TY - JOUR

T1 - Improved performance in charge-trap-type flash memories with an Al 2O3 dielectric by using bandgap engineering of charge-trapping layers

AU - Seo, Yu Jeong

AU - An, Ho Myoung

AU - Kim, Hee Dong

AU - Kim, Tae Geun

PY - 2009/12

Y1 - 2009/12

N2 - A band-engineered configuration of the new polycrystalline Si/Al 2O3/Si3N4/SiO2/Si (SANOS) device structure with a non-uniform nitride composition is proposed for high-density flash memories. The dramatic improvement can be attributed to the charge trapping efficiency, the data retention and the cycling endurance performance. The SANOS device designed in this paper holds promise for applications to next-generation charge-trap memory devices.

AB - A band-engineered configuration of the new polycrystalline Si/Al 2O3/Si3N4/SiO2/Si (SANOS) device structure with a non-uniform nitride composition is proposed for high-density flash memories. The dramatic improvement can be attributed to the charge trapping efficiency, the data retention and the cycling endurance performance. The SANOS device designed in this paper holds promise for applications to next-generation charge-trap memory devices.

KW - ANO

KW - Bandgap engineering

KW - SANOS

KW - Si-rich

UR - http://www.scopus.com/inward/record.url?scp=76249108410&partnerID=8YFLogxK

U2 - 10.3938/jkps.55.2689

DO - 10.3938/jkps.55.2689

M3 - Article

AN - SCOPUS:76249108410

SN - 0374-4884

VL - 55

SP - 2689

EP - 2692

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 6 PART. 1

ER -