Improved performance in charge-trap-type flash memories with an Al ₂O₃ dielectric by using bandgap engineering of charge-trapping layers

Keyphrases

• Flash Memory 100%
• Dielectric 100%
• Aluminum Oxide 100%
• Performance Improvement 100%
• Charge Trapping 100%
• Bandgap Engineering 100%
• Trap Type 100%
• Sano 100%
• Charge Trapping Layer 100%
• Silica 50%
• Silicon Nitride 50%
• Nitrides 50%
• High Density 50%
• Data Retention 50%
• Device Structure 50%
• Trapping Efficiency 50%
• Charge-trap Memory Devices 50%
• Polycrystalline Si 50%
• Cycling Endurance 50%
• Endurance Performance 50%

Engineering

• Dielectrics 100%
• Engineering 100%
• Flash Memory 100%
• Band Gap 100%
• Polycrystalline 50%
• Nitride 50%
• Data Retention 50%
• Device Structure 50%
• Band-Engineered 50%
• Charge Trap Memory 50%
• Phase Composition 50%
• Silicon Dioxide 50%

Material Science

• Charge Trapping 100%
• Dielectric Material 100%
• Density 50%
• Silicon Nitride 50%
• Nitride Compound 50%
• Phase Composition 50%