We investigated the use of transparent conductive oxide for near-ultraviolet light-emitting diodes based on co-sputtered gallium oxide (Ga2O3) and indium tin oxide (ITO). The electrical and optical properties of Ga2O3/ITO (IGTO) were observed to improve through hydrogen annealing, which resulted in a sheet resistance of 164 Ω/□ and an optical transmittance of 94% at increased carrier concentration and crystallization of the co-sputtered film through hydrogen annealing. Moreover, ohmic-like contacts were formed on the p-GaN substrate with a specific contact resistance of 3.9 × 10-1 Ω cm2.
|Number of pages||5|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 2014 Nov 1|
Bibliographical notePublisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
- hydrogen annealing
- transparent conductive oxides
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
- Materials Chemistry