Improved performance of Ga2O3/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes

Sukwon Kim; Su Jin Kim; Kyeong Heon Kim; Hee Dong Kim; Tae Geun Kim

doi:10.1002/pssa.201431278

Improved performance of Ga₂O₃/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes

Sukwon Kim, Su Jin Kim, Kyeong Heon Kim, Hee Dong Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We investigated the use of transparent conductive oxide for near-ultraviolet light-emitting diodes based on co-sputtered gallium oxide (Ga₂O₃) and indium tin oxide (ITO). The electrical and optical properties of Ga₂O₃/ITO (IGTO) were observed to improve through hydrogen annealing, which resulted in a sheet resistance of 164 Ω/□ and an optical transmittance of 94% at increased carrier concentration and crystallization of the co-sputtered film through hydrogen annealing. Moreover, ohmic-like contacts were formed on the p-GaN substrate with a specific contact resistance of 3.9 × 10^-1 Ω cm².

Original language	English
Pages (from-to)	2569-2573
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	211
Issue number	11
DOIs	https://doi.org/10.1002/pssa.201431278
Publication status	Published - 2014 Nov 1

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

GaO
IGTO
co-sputtering
hydrogen annealing
transparent conductive oxides

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1002/pssa.201431278

Cite this

Improved performance of Ga₂O₃/ITO-based transparent conductive oxide films using hydrogen annealing for near-ultraviolet light-emitting diodes. / Kim, Sukwon; Kim, Su Jin; Kim, Kyeong Heon et al.
In: Physica Status Solidi (A) Applications and Materials Science, Vol. 211, No. 11, 01.11.2014, p. 2569-2573.

Research output: Contribution to journal › Article › peer-review

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abstract = "We investigated the use of transparent conductive oxide for near-ultraviolet light-emitting diodes based on co-sputtered gallium oxide (Ga2O3) and indium tin oxide (ITO). The electrical and optical properties of Ga2O3/ITO (IGTO) were observed to improve through hydrogen annealing, which resulted in a sheet resistance of 164 Ω/□ and an optical transmittance of 94% at increased carrier concentration and crystallization of the co-sputtered film through hydrogen annealing. Moreover, ohmic-like contacts were formed on the p-GaN substrate with a specific contact resistance of 3.9 × 10-1 Ω cm2.",

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