Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer

Jihye Lee; Chang Soo Han; Sohee Jeong; Byoung Ho Kang; Seok Min Hong; Do Eok Kim; Shin Won Kang

doi:10.1166/jnn.2011.3162

Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer

Jihye Lee, Chang Soo Han, Sohee Jeong, Byoung Ho Kang, Seok Min Hong, Do Eok Kim, Shin Won Kang

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Reported herein are the effects of the fabrication variables and surface capping of nanocrystal quantum dots (NQDs) on the characteristics of NQDs-based light-emitting diodes (LEDs). The molecular weight of the hole transport layer (HTL) material and the annealing conditions of the NQDs layer were chosen as fabrication process variables. Their effects on the layer characteristics and device efficiency were characterized. The maximum brightness varied over 50% according to the molecular weight of the HTL material. The optimized annealing temperature was shown to improve the maximum brightness by 20%. The surface-capping molecules of the NQDs were changed from conventional trioctyl phosphine/trioctyl phosphine oxide (TOPO/TOP) to pyridine and were incorporated into LEDs, and its effects on the device characteristics were discussed Copyright

Original language	English
Pages (from-to)	432-436
Number of pages	5
Journal	Journal of Nanoscience and Nanotechnology
Volume	11
Issue number	1
DOIs	https://doi.org/10.1166/jnn.2011.3162
Publication status	Published - 2011 Jan
Externally published	Yes

Keywords

HTL
LEDs
Nanocrystal
Quantum dot
TOPO/TOP

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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10.1166/jnn.2011.3162

Cite this

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abstract = "Reported herein are the effects of the fabrication variables and surface capping of nanocrystal quantum dots (NQDs) on the characteristics of NQDs-based light-emitting diodes (LEDs). The molecular weight of the hole transport layer (HTL) material and the annealing conditions of the NQDs layer were chosen as fabrication process variables. Their effects on the layer characteristics and device efficiency were characterized. The maximum brightness varied over 50% according to the molecular weight of the HTL material. The optimized annealing temperature was shown to improve the maximum brightness by 20%. The surface-capping molecules of the NQDs were changed from conventional trioctyl phosphine/trioctyl phosphine oxide (TOPO/TOP) to pyridine and were incorporated into LEDs, and its effects on the device characteristics were discussed Copyright",

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author = "Jihye Lee and Han, {Chang Soo} and Sohee Jeong and Kang, {Byoung Ho} and Hong, {Seok Min} and Kim, {Do Eok} and Kang, {Shin Won}",

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doi = "10.1166/jnn.2011.3162",

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AU - Lee, Jihye

AU - Han, Chang Soo

AU - Jeong, Sohee

AU - Kang, Byoung Ho

AU - Hong, Seok Min

AU - Kim, Do Eok

AU - Kang, Shin Won

PY - 2011/1

Y1 - 2011/1

N2 - Reported herein are the effects of the fabrication variables and surface capping of nanocrystal quantum dots (NQDs) on the characteristics of NQDs-based light-emitting diodes (LEDs). The molecular weight of the hole transport layer (HTL) material and the annealing conditions of the NQDs layer were chosen as fabrication process variables. Their effects on the layer characteristics and device efficiency were characterized. The maximum brightness varied over 50% according to the molecular weight of the HTL material. The optimized annealing temperature was shown to improve the maximum brightness by 20%. The surface-capping molecules of the NQDs were changed from conventional trioctyl phosphine/trioctyl phosphine oxide (TOPO/TOP) to pyridine and were incorporated into LEDs, and its effects on the device characteristics were discussed Copyright

AB - Reported herein are the effects of the fabrication variables and surface capping of nanocrystal quantum dots (NQDs) on the characteristics of NQDs-based light-emitting diodes (LEDs). The molecular weight of the hole transport layer (HTL) material and the annealing conditions of the NQDs layer were chosen as fabrication process variables. Their effects on the layer characteristics and device efficiency were characterized. The maximum brightness varied over 50% according to the molecular weight of the HTL material. The optimized annealing temperature was shown to improve the maximum brightness by 20%. The surface-capping molecules of the NQDs were changed from conventional trioctyl phosphine/trioctyl phosphine oxide (TOPO/TOP) to pyridine and were incorporated into LEDs, and its effects on the device characteristics were discussed Copyright

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KW - Quantum dot

KW - TOPO/TOP

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Improved performance of nanocrystal quantum dots-based LEDs by modifying hole transport layer

Abstract

Keywords

ASJC Scopus subject areas

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