Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage

Dae Woo Jeon, Lee Woon Jang, Ju Won Jeon, Jae Woo Park, Young Ho Song, Seong Ran Jeon, Jin Woo Ju, Jong Hyeob Baek, In Hwan Lee

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


In this study, we have fabricated 375-nm-wavelength InGaN/AlInGaN nanopillar light emitting diodes (LED) structures on c-plane sapphire. A uniform and highly vertical nanopillar structure was fabricated using self-organized Ni/SiO2 nano-size mask by dry etching method. To minimize the dry etching damage, the samples were subjected to high temperature annealing with subsequent chemical passivation in KOH solution. Prior to annealing and passivation the UV nanopillar LEDs showed the photoluminescence (PL) efficiency about 2.5 times higher than conventional UV LED structures which is attributed to better light extraction efficiency and possibly some improvement of internal quantum efficiency due to partially relieved strain. Annealing alone further increased the PL efficiency by about 4.5 times compared to the conventional UV LEDs, while KOH passivation led to the overall PL efficiency improvement by more than 7 times. Combined results of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) suggest that annealing decreases the number of lattice defects and relieves the strain in the surface region of the nanopillars whereas KOH treatment removes the surface oxide from nanopillar surface.

Original languageEnglish
Pages (from-to)3645-3649
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Issue number5
Publication statusPublished - 2013 May
Externally publishedYes


  • Chemical treatment
  • Dry etching
  • InGaN/AlInGaN LED
  • Nanopillar

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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