Improved quantitative analysis of Cu(In,Ga)Se2 thin films using MCs+-SIMS depth profiling

Jihye Lee; Seon Hee Kim; Kang Bong Lee; Byoung Koun Min; Yeonhee Lee

doi:10.1007/s00339-013-8009-4

Improved quantitative analysis of Cu(In,Ga)Se₂ thin films using MCs⁺-SIMS depth profiling

Jihye Lee, Seon Hee Kim, Kang Bong Lee, Byoung Koun Min, Yeonhee Lee

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The chalcopyrite semiconductor, Cu(InGa)Se₂ (CIGS), is popular as an absorber material for incorporation in high-efficiency photovoltaic devices because it has an appropriate band gap and a high absorption coefficient. To improve the efficiency of solar cells, many research groups have studied the quantitative characterization of the CIGS absorber layers. In this study, a compositional analysis of a CIGS thin film was performed by depth profiling in secondary ion mass spectrometry (SIMS) with MCs⁺ (where M denotes an element from the CIGS sample) cluster ion detection, and the relative sensitivity factor of the cluster ion was calculated. The emission of MCs⁺ ions from CIGS absorber elements, such as Cu, In, Ga, and Se, under Cs⁺ ion bombardment was investigated using time-of-flight SIMS (TOF-SIMS) and magnetic sector SIMS. The detection of MCs⁺ ions suppressed the matrix effects of varying concentrations of constituent elements of the CIGS thin films. The atomic concentrations of the CIGS absorber layers from the MCs⁺-SIMS exhibited more accurate quantification compared to those of elemental SIMS and agreed with those of inductively coupled plasma atomic emission spectrometry. Both TOF-SIMS and magnetic sector SIMS depth profiles showed a similar MCs⁺ distribution for the CIGS thin films.

Original language	English
Pages (from-to)	1355-1364
Number of pages	10
Journal	Applied Physics A: Materials Science and Processing
Volume	115
Issue number	4
DOIs	https://doi.org/10.1007/s00339-013-8009-4
Publication status	Published - 2014 Jun

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Science & Technology (KIST) Institutional Program.

ASJC Scopus subject areas

General Chemistry
General Materials Science

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1007/s00339-013-8009-4

Cite this

@article{ea101260aba74721ab16b08f99418e45,

title = "Improved quantitative analysis of Cu(In,Ga)Se2 thin films using MCs+-SIMS depth profiling",

abstract = "The chalcopyrite semiconductor, Cu(InGa)Se2 (CIGS), is popular as an absorber material for incorporation in high-efficiency photovoltaic devices because it has an appropriate band gap and a high absorption coefficient. To improve the efficiency of solar cells, many research groups have studied the quantitative characterization of the CIGS absorber layers. In this study, a compositional analysis of a CIGS thin film was performed by depth profiling in secondary ion mass spectrometry (SIMS) with MCs+ (where M denotes an element from the CIGS sample) cluster ion detection, and the relative sensitivity factor of the cluster ion was calculated. The emission of MCs+ ions from CIGS absorber elements, such as Cu, In, Ga, and Se, under Cs+ ion bombardment was investigated using time-of-flight SIMS (TOF-SIMS) and magnetic sector SIMS. The detection of MCs+ ions suppressed the matrix effects of varying concentrations of constituent elements of the CIGS thin films. The atomic concentrations of the CIGS absorber layers from the MCs+-SIMS exhibited more accurate quantification compared to those of elemental SIMS and agreed with those of inductively coupled plasma atomic emission spectrometry. Both TOF-SIMS and magnetic sector SIMS depth profiles showed a similar MCs+ distribution for the CIGS thin films.",

author = "Jihye Lee and Kim, {Seon Hee} and Lee, {Kang Bong} and Min, {Byoung Koun} and Yeonhee Lee",

note = "Funding Information: This work was supported by the Korea Institute of Science & Technology (KIST) Institutional Program.",

year = "2014",

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doi = "10.1007/s00339-013-8009-4",

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AU - Lee, Jihye

AU - Kim, Seon Hee

AU - Lee, Kang Bong

AU - Min, Byoung Koun

AU - Lee, Yeonhee

N1 - Funding Information: This work was supported by the Korea Institute of Science & Technology (KIST) Institutional Program.

PY - 2014/6

Y1 - 2014/6

N2 - The chalcopyrite semiconductor, Cu(InGa)Se2 (CIGS), is popular as an absorber material for incorporation in high-efficiency photovoltaic devices because it has an appropriate band gap and a high absorption coefficient. To improve the efficiency of solar cells, many research groups have studied the quantitative characterization of the CIGS absorber layers. In this study, a compositional analysis of a CIGS thin film was performed by depth profiling in secondary ion mass spectrometry (SIMS) with MCs+ (where M denotes an element from the CIGS sample) cluster ion detection, and the relative sensitivity factor of the cluster ion was calculated. The emission of MCs+ ions from CIGS absorber elements, such as Cu, In, Ga, and Se, under Cs+ ion bombardment was investigated using time-of-flight SIMS (TOF-SIMS) and magnetic sector SIMS. The detection of MCs+ ions suppressed the matrix effects of varying concentrations of constituent elements of the CIGS thin films. The atomic concentrations of the CIGS absorber layers from the MCs+-SIMS exhibited more accurate quantification compared to those of elemental SIMS and agreed with those of inductively coupled plasma atomic emission spectrometry. Both TOF-SIMS and magnetic sector SIMS depth profiles showed a similar MCs+ distribution for the CIGS thin films.

AB - The chalcopyrite semiconductor, Cu(InGa)Se2 (CIGS), is popular as an absorber material for incorporation in high-efficiency photovoltaic devices because it has an appropriate band gap and a high absorption coefficient. To improve the efficiency of solar cells, many research groups have studied the quantitative characterization of the CIGS absorber layers. In this study, a compositional analysis of a CIGS thin film was performed by depth profiling in secondary ion mass spectrometry (SIMS) with MCs+ (where M denotes an element from the CIGS sample) cluster ion detection, and the relative sensitivity factor of the cluster ion was calculated. The emission of MCs+ ions from CIGS absorber elements, such as Cu, In, Ga, and Se, under Cs+ ion bombardment was investigated using time-of-flight SIMS (TOF-SIMS) and magnetic sector SIMS. The detection of MCs+ ions suppressed the matrix effects of varying concentrations of constituent elements of the CIGS thin films. The atomic concentrations of the CIGS absorber layers from the MCs+-SIMS exhibited more accurate quantification compared to those of elemental SIMS and agreed with those of inductively coupled plasma atomic emission spectrometry. Both TOF-SIMS and magnetic sector SIMS depth profiles showed a similar MCs+ distribution for the CIGS thin films.

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