Improved quantitative analysis of Cu(In,Ga)Se2 thin films using MCs+-SIMS depth profiling

Jihye Lee, Seon Hee Kim, Kang Bong Lee, Byoung Koun Min, Yeonhee Lee

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


The chalcopyrite semiconductor, Cu(InGa)Se2 (CIGS), is popular as an absorber material for incorporation in high-efficiency photovoltaic devices because it has an appropriate band gap and a high absorption coefficient. To improve the efficiency of solar cells, many research groups have studied the quantitative characterization of the CIGS absorber layers. In this study, a compositional analysis of a CIGS thin film was performed by depth profiling in secondary ion mass spectrometry (SIMS) with MCs+ (where M denotes an element from the CIGS sample) cluster ion detection, and the relative sensitivity factor of the cluster ion was calculated. The emission of MCs+ ions from CIGS absorber elements, such as Cu, In, Ga, and Se, under Cs+ ion bombardment was investigated using time-of-flight SIMS (TOF-SIMS) and magnetic sector SIMS. The detection of MCs+ ions suppressed the matrix effects of varying concentrations of constituent elements of the CIGS thin films. The atomic concentrations of the CIGS absorber layers from the MCs+-SIMS exhibited more accurate quantification compared to those of elemental SIMS and agreed with those of inductively coupled plasma atomic emission spectrometry. Both TOF-SIMS and magnetic sector SIMS depth profiles showed a similar MCs+ distribution for the CIGS thin films.

Original languageEnglish
Pages (from-to)1355-1364
Number of pages10
JournalApplied Physics A: Materials Science and Processing
Issue number4
Publication statusPublished - 2014 Jun

Bibliographical note

Funding Information:
This work was supported by the Korea Institute of Science & Technology (KIST) Institutional Program.

ASJC Scopus subject areas

  • General Chemistry
  • General Materials Science


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