Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing

Hee Dong Kim, Min Ju Yun, Seok Man Hong, Ho Myoung An, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


The authors investigated the effects of hydrogen postannealing on data retention and set/reset current variation in a Ti/ZrN/Pt resistive switching memory cell. Annealing the Ti/ZrN/Pt sample in a N2+H2 ambient gas versus a N2 ambient gas reduced the set currents from 10.4 to 4.1mA and the reset currents from 1.2 to 0.2μA, whereas the current ratio increased from ∼9×103 to ∼2×104. In addition, current variations in the set and reset states decrease at temperatures of 25 and 85°C (>10yr) due to reduction of the interface trap by hydrogen passivation effects.

Original languageEnglish
Article number041205
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number4
Publication statusPublished - 2013 Jul

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769, 2012-00109). This work was also supported by the Samsung Semiconductor Research Center of Korea University.

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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