The authors investigated the effects of hydrogen postannealing on data retention and set/reset current variation in a Ti/ZrN/Pt resistive switching memory cell. Annealing the Ti/ZrN/Pt sample in a N2+H2 ambient gas versus a N2 ambient gas reduced the set currents from 10.4 to 4.1mA and the reset currents from 1.2 to 0.2μA, whereas the current ratio increased from ∼9×103 to ∼2×104. In addition, current variations in the set and reset states decrease at temperatures of 25 and 85°C (>10yr) due to reduction of the interface trap by hydrogen passivation effects.
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - 2013 Jul
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (MEST) (No. 2011-0028769, 2012-00109). This work was also supported by the Samsung Semiconductor Research Center of Korea University.
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering