Improved reliability of Ti/ZrN/Pt resistive switching memory cells using hydrogen postannealing

Keyphrases

• Post-annealing 100%
• Memory Cell 100%
• Increased Reliability 100%
• Resistive Random Access Memory (ReRAM) 100%
• Ambient Gas 100%
• Reset Current 100%
• Current Variation 100%
• Annealing 50%
• Current Ratio 50%
• Data Retention 50%
• Interface Traps 50%
• Set-reset 50%
• Passivation Effect 50%
• Hydrogen Passivation 50%

Engineering

• Resistive 100%
• Passivation 50%
• Current Ratio 50%
• Data Retention 50%
• Interface Trap 50%