Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering

Min Ju Yun; Hee Dong Kim; Tae Geun Kim

doi:10.1116/1.4824488

Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering

Min Ju Yun, Hee Dong Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (V_SET/V_RESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in V_SET and V _RESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 10¹ and a longer data retention of over 10⁵ s.

Original language	English
Article number	60601
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	31
Issue number	6
DOIs	https://doi.org/10.1116/1.4824488
Publication status	Published - 2013 Nov

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (Grant Nos. 2011-0028769 and 2012-00109).

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1116/1.4824488

Cite this

Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering. / Ju Yun, Min; Kim, Hee Dong; Geun Kim, Tae.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 31, No. 6, 60601, 11.2013.

Research output: Contribution to journal › Article › peer-review

@article{971fcbbf3b0f4553b2d956e9d1d3af87,

title = "Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering",

abstract = "In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and V RESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.",

author = "{Ju Yun}, Min and Kim, {Hee Dong} and {Geun Kim}, Tae",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (Grant Nos. 2011-0028769 and 2012-00109).",

year = "2013",

month = nov,

doi = "10.1116/1.4824488",

language = "English",

volume = "31",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering

AU - Ju Yun, Min

AU - Kim, Hee Dong

AU - Geun Kim, Tae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (Grant Nos. 2011-0028769 and 2012-00109).

PY - 2013/11

Y1 - 2013/11

N2 - In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and V RESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.

AB - In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and V RESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.

UR - http://www.scopus.com/inward/record.url?scp=84890021532&partnerID=8YFLogxK

U2 - 10.1116/1.4824488

DO - 10.1116/1.4824488

M3 - Article

AN - SCOPUS:84890021532

SN - 1071-1023

VL - 31

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

IS - 6

M1 - 60601

ER -

Improved resistive-switching characteristics observed in Pt embedded nickel-nitride films prepared by radio-frequency magnetron sputtering

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this