In this paper, the authors report the forming-free bipolar-switching operation at low set/reset voltages (VSET/VRESET) using a Pt embedded-NiN based resistive random access memory (ReRAM) cell. Compared to conventional NiN based ReRAM cells, the variations in VSET and V RESET were reduced from 1 to 0.4 V and from 0.4 to 0.2 V, respectively, using the Pt embedded ReRAM cells. These results show that the embedded Pt particles might assist in the uniform formation of the conducting filaments in the NiN films, without an initial forming process. In addition, in the endurance and retention tests, Pt embedded ReRAM cells showed more stable repetitive dc cycling characteristics with a larger resistance ratio of approximately 1 × 101 and a longer data retention of over 105 s.
|Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
|Published - 2013 Nov
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Government (Grant Nos. 2011-0028769 and 2012-00109).
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering