Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

Ju Hyun Park; Hee Dong Kim; Seok Man Hong; Min Ju Yun; Dong Su Jeon; Tae Geun Kim

doi:10.1002/pssr.201308309

Improved resistive switching phenomena observed in SiN_x-based resistive switching memory through oxygen doping process

Ju Hyun Park, Hee Dong Kim, Seok Man Hong, Min Ju Yun, Dong Su Jeon, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The improvement of resistive switching (RS) phenomena of silicon-nitride (SiN_x)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiN_x films, the oxygen doped SiN_x (SiN_x:O₂)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiN_x:O₂ film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiN_x films can effectively improve the RS characteristics of SiN_x-based ReRAM cells.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1002/pssr.201308309
Publication status	Published - 2014 Mar

Keywords

Charge trapping
Dangling bonds
ReRAM
Resistive switching
Silicon
Silicon nitride

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

Access to Document

10.1002/pssr.201308309

Cite this

@article{21a710f87e5e45bdb4837f585e7a1f85,

title = "Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process",

abstract = "The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O2)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells.",

keywords = "Charge trapping, Dangling bonds, ReRAM, Resistive switching, Silicon, Silicon nitride",

author = "Park, {Ju Hyun} and Kim, {Hee Dong} and Hong, {Seok Man} and Yun, {Min Ju} and Jeon, {Dong Su} and Kim, {Tae Geun}",

year = "2014",

month = mar,

doi = "10.1002/pssr.201308309",

language = "English",

volume = "8",

pages = "239--242",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

AU - Park, Ju Hyun

AU - Kim, Hee Dong

AU - Hong, Seok Man

AU - Yun, Min Ju

AU - Jeon, Dong Su

AU - Kim, Tae Geun

PY - 2014/3

Y1 - 2014/3

N2 - The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O2)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells.

AB - The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O2)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells.

KW - Charge trapping

KW - Dangling bonds

KW - ReRAM

KW - Resistive switching

KW - Silicon

KW - Silicon nitride

UR - http://www.scopus.com/inward/record.url?scp=84896052988&partnerID=8YFLogxK

U2 - 10.1002/pssr.201308309

DO - 10.1002/pssr.201308309

M3 - Article

AN - SCOPUS:84896052988

SN - 1862-6254

VL - 8

SP - 239

EP - 242

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 3

ER -