Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

Ju Hyun Park; Hee Dong Kim; Seok Man Hong; Min Ju Yun; Dong Su Jeon; Tae Geun Kim

doi:10.1002/pssr.201308309

Improved resistive switching phenomena observed in SiN_x-based resistive switching memory through oxygen doping process

Ju Hyun Park, Hee Dong Kim, Seok Man Hong, Min Ju Yun, Dong Su Jeon, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The improvement of resistive switching (RS) phenomena of silicon-nitride (SiN_x)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiN_x films, the oxygen doped SiN_x (SiN_x:O₂)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiN_x:O₂ film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiN_x films can effectively improve the RS characteristics of SiN_x-based ReRAM cells.

Original language	English
Pages (from-to)	239-242
Number of pages	4
Journal	Physica Status Solidi - Rapid Research Letters
Volume	8
Issue number	3
DOIs	https://doi.org/10.1002/pssr.201308309
Publication status	Published - 2014 Mar

Keywords

Charge trapping
Dangling bonds
ReRAM
Resistive switching
Silicon
Silicon nitride

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics

Access to Document

10.1002/pssr.201308309

Cite this

@article{21a710f87e5e45bdb4837f585e7a1f85,

title = "Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process",

abstract = "The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O2)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells.",

keywords = "Charge trapping, Dangling bonds, ReRAM, Resistive switching, Silicon, Silicon nitride",

author = "Park, {Ju Hyun} and Kim, {Hee Dong} and Hong, {Seok Man} and Yun, {Min Ju} and Jeon, {Dong Su} and Kim, {Tae Geun}",

year = "2014",

month = mar,

doi = "10.1002/pssr.201308309",

language = "English",

volume = "8",

pages = "239--242",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "3",

}

TY - JOUR

T1 - Improved resistive switching phenomena observed in SiNx-based resistive switching memory through oxygen doping process

AU - Park, Ju Hyun

AU - Kim, Hee Dong

AU - Hong, Seok Man

AU - Yun, Min Ju

AU - Jeon, Dong Su

AU - Kim, Tae Geun

PY - 2014/3

Y1 - 2014/3

N2 - The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O2)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells.

AB - The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O2)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells.

KW - Charge trapping

KW - Dangling bonds

KW - ReRAM

KW - Resistive switching

KW - Silicon

KW - Silicon nitride

UR - http://www.scopus.com/inward/record.url?scp=84896052988&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896052988&partnerID=8YFLogxK

U2 - 10.1002/pssr.201308309

DO - 10.1002/pssr.201308309

M3 - Article

AN - SCOPUS:84896052988

SN - 1862-6254

VL - 8

SP - 239

EP - 242

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 3

ER -