Abstract
The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O2)-based ReRAM cells show a lower current (~0.3 μA) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells.
Original language | English |
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Pages (from-to) | 239-242 |
Number of pages | 4 |
Journal | Physica Status Solidi - Rapid Research Letters |
Volume | 8 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2014 Mar |
Keywords
- Charge trapping
- Dangling bonds
- ReRAM
- Resistive switching
- Silicon
- Silicon nitride
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics