Improved threshold switching characteristics of vanadium oxide/oxynitride-based multilayer selector in a cross-point array

Dae Yun Kang; Adila Rani; Kyoung Joung Yoo; Tae Geun Kim

doi:10.1016/j.jallcom.2022.166192

Improved threshold switching characteristics of vanadium oxide/oxynitride-based multilayer selector in a cross-point array

Dae Yun Kang, Adila Rani, Kyoung Joung Yoo, Tae Geun Kim

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We developed a selector device with the bi-directional threshold switching characteristics of vanadium oxide (VO_x) by implementing vanadium oxynitride (VO_x:N_y) in a sandwich structure. The proposed device with the Pt/VO_x:N_y/VO_x/VO_x:N_y/Pt structure as opposed to a cell with a Pt/VO_x/Pt structure exhibits lower off-current and stable switching characteristics. The elements of the device were analyzed using high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy, and its memory characteristics were verified by applying the Pt/VO_x:N_y/VO_x/VO_x:N_y/Pt selector to amorphous indium-gallium-zinc oxide-based resistive switching (RS) devices in the 1 selector-1 ReRAM structure. Our device shows stable RS properties over 100 DC cycles and> 10⁶ AC cycles, an improved ON/OFF ratio (~67), a high switching speed (<110 ns), and a rectification ratio of ~1 × 10³ when the read margin is 10%.

Original language	English
Article number	166192
Journal	Journal of Alloys and Compounds
Volume	922
DOIs	https://doi.org/10.1016/j.jallcom.2022.166192
Publication status	Published - 2022 Nov 20

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant, funded by the Korean government ( Ministry of Science, ICT & Future Planning , 2016R1A3B1908249 ).

Publisher Copyright:
© 2022 Elsevier B.V.

Keywords

Insulator-metal transition material
Resistive switching
Selector device
Vanadium oxynitride

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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10.1016/j.jallcom.2022.166192

Cite this

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title = "Improved threshold switching characteristics of vanadium oxide/oxynitride-based multilayer selector in a cross-point array",

abstract = "We developed a selector device with the bi-directional threshold switching characteristics of vanadium oxide (VOx) by implementing vanadium oxynitride (VOx:Ny) in a sandwich structure. The proposed device with the Pt/VOx:Ny/VOx/VOx:Ny/Pt structure as opposed to a cell with a Pt/VOx/Pt structure exhibits lower off-current and stable switching characteristics. The elements of the device were analyzed using high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy, and its memory characteristics were verified by applying the Pt/VOx:Ny/VOx/VOx:Ny/Pt selector to amorphous indium-gallium-zinc oxide-based resistive switching (RS) devices in the 1 selector-1 ReRAM structure. Our device shows stable RS properties over 100 DC cycles and> 106 AC cycles, an improved ON/OFF ratio (~67), a high switching speed (<110 ns), and a rectification ratio of ~1 × 103 when the read margin is 10%.",

keywords = "Insulator-metal transition material, Resistive switching, Selector device, Vanadium oxynitride",

author = "Kang, {Dae Yun} and Adila Rani and Yoo, {Kyoung Joung} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant, funded by the Korean government ( Ministry of Science, ICT & Future Planning , 2016R1A3B1908249 ). Publisher Copyright: {\textcopyright} 2022 Elsevier B.V.",

year = "2022",

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doi = "10.1016/j.jallcom.2022.166192",

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AU - Kang, Dae Yun

AU - Rani, Adila

AU - Yoo, Kyoung Joung

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant, funded by the Korean government ( Ministry of Science, ICT & Future Planning , 2016R1A3B1908249 ). Publisher Copyright: © 2022 Elsevier B.V.

PY - 2022/11/20

Y1 - 2022/11/20

N2 - We developed a selector device with the bi-directional threshold switching characteristics of vanadium oxide (VOx) by implementing vanadium oxynitride (VOx:Ny) in a sandwich structure. The proposed device with the Pt/VOx:Ny/VOx/VOx:Ny/Pt structure as opposed to a cell with a Pt/VOx/Pt structure exhibits lower off-current and stable switching characteristics. The elements of the device were analyzed using high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy, and its memory characteristics were verified by applying the Pt/VOx:Ny/VOx/VOx:Ny/Pt selector to amorphous indium-gallium-zinc oxide-based resistive switching (RS) devices in the 1 selector-1 ReRAM structure. Our device shows stable RS properties over 100 DC cycles and> 106 AC cycles, an improved ON/OFF ratio (~67), a high switching speed (<110 ns), and a rectification ratio of ~1 × 103 when the read margin is 10%.

AB - We developed a selector device with the bi-directional threshold switching characteristics of vanadium oxide (VOx) by implementing vanadium oxynitride (VOx:Ny) in a sandwich structure. The proposed device with the Pt/VOx:Ny/VOx/VOx:Ny/Pt structure as opposed to a cell with a Pt/VOx/Pt structure exhibits lower off-current and stable switching characteristics. The elements of the device were analyzed using high-resolution transmission electron microscopy and X-ray photoelectron spectroscopy, and its memory characteristics were verified by applying the Pt/VOx:Ny/VOx/VOx:Ny/Pt selector to amorphous indium-gallium-zinc oxide-based resistive switching (RS) devices in the 1 selector-1 ReRAM structure. Our device shows stable RS properties over 100 DC cycles and> 106 AC cycles, an improved ON/OFF ratio (~67), a high switching speed (<110 ns), and a rectification ratio of ~1 × 103 when the read margin is 10%.

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KW - Resistive switching

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Improved threshold switching characteristics of vanadium oxide/oxynitride-based multilayer selector in a cross-point array

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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