Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers

Ju Hyun Park; Dong Su Jeon; Tae Geun Kim

doi:10.1088/1361-6463/50/1/015104

Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers

Ju Hyun Park, Dong Su Jeon, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this paper, improved uniformity in the resistive switching (RS) characteristics of ZnO-based memristors using Ti sub-oxide layers (metallic TiO_x, insulating TiO_y) is reported. Compared with Pt/Ti/ZnO/Pt cells, more reliable and reproducible RS operation was observed in Pt/TiO_x (or TiO_y)/ZnO/Pt cells, particularly with insulating TiO_y, because Ti sub-oxide layers play the role of oxygen reservoirs that help rupture the conducting filament. By comparison, Pt/TiO_y/ZnO/Pt cells exhibited the best performance, with a large on/off ratio (∼10⁵) at a read voltage of 0.4 V, and highly stable low- and high-resistive state operation for 100 direct-current sweep cycles.

Original language	English
Article number	015104
Journal	Journal of Physics D: Applied Physics
Volume	50
Issue number	1
DOIs	https://doi.org/10.1088/1361-6463/50/1/015104
Publication status	Published - 2017 Jan 11

Keywords

memristor
oxygen reservoir
resistive switching
zince oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/1361-6463/50/1/015104

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title = "Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers",

abstract = "In this paper, improved uniformity in the resistive switching (RS) characteristics of ZnO-based memristors using Ti sub-oxide layers (metallic TiOx, insulating TiOy) is reported. Compared with Pt/Ti/ZnO/Pt cells, more reliable and reproducible RS operation was observed in Pt/TiOx (or TiOy)/ZnO/Pt cells, particularly with insulating TiOy, because Ti sub-oxide layers play the role of oxygen reservoirs that help rupture the conducting filament. By comparison, Pt/TiOy/ZnO/Pt cells exhibited the best performance, with a large on/off ratio (∼105) at a read voltage of 0.4 V, and highly stable low- and high-resistive state operation for 100 direct-current sweep cycles.",

keywords = "memristor, oxygen reservoir, resistive switching, zince oxide",

author = "Park, {Ju Hyun} and Jeon, {Dong Su} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (Ministry of Science, ICT and Future Planning, No. 2016R1A3B1908249). The authors are also grateful for the support from Samsung semiconductor research center at Korea University. Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2017",

month = jan,

day = "11",

doi = "10.1088/1361-6463/50/1/015104",

language = "English",

volume = "50",

journal = "Journal Physics D: Applied Physics",

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AU - Park, Ju Hyun

AU - Jeon, Dong Su

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (Ministry of Science, ICT and Future Planning, No. 2016R1A3B1908249). The authors are also grateful for the support from Samsung semiconductor research center at Korea University. Publisher Copyright: © 2016 IOP Publishing Ltd.

PY - 2017/1/11

Y1 - 2017/1/11

N2 - In this paper, improved uniformity in the resistive switching (RS) characteristics of ZnO-based memristors using Ti sub-oxide layers (metallic TiOx, insulating TiOy) is reported. Compared with Pt/Ti/ZnO/Pt cells, more reliable and reproducible RS operation was observed in Pt/TiOx (or TiOy)/ZnO/Pt cells, particularly with insulating TiOy, because Ti sub-oxide layers play the role of oxygen reservoirs that help rupture the conducting filament. By comparison, Pt/TiOy/ZnO/Pt cells exhibited the best performance, with a large on/off ratio (∼105) at a read voltage of 0.4 V, and highly stable low- and high-resistive state operation for 100 direct-current sweep cycles.

AB - In this paper, improved uniformity in the resistive switching (RS) characteristics of ZnO-based memristors using Ti sub-oxide layers (metallic TiOx, insulating TiOy) is reported. Compared with Pt/Ti/ZnO/Pt cells, more reliable and reproducible RS operation was observed in Pt/TiOx (or TiOy)/ZnO/Pt cells, particularly with insulating TiOy, because Ti sub-oxide layers play the role of oxygen reservoirs that help rupture the conducting filament. By comparison, Pt/TiOy/ZnO/Pt cells exhibited the best performance, with a large on/off ratio (∼105) at a read voltage of 0.4 V, and highly stable low- and high-resistive state operation for 100 direct-current sweep cycles.

KW - memristor

KW - oxygen reservoir

KW - resistive switching

KW - zince oxide

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SN - 0022-3727

VL - 50

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

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M1 - 015104

ER -

Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers

Abstract

Keywords

ASJC Scopus subject areas

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