Improved uniformity in the switching characteristics of ZnO-based memristors using Ti sub-oxide layers

Ju Hyun Park, Dong Su Jeon, Tae Geun Kim

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

In this paper, improved uniformity in the resistive switching (RS) characteristics of ZnO-based memristors using Ti sub-oxide layers (metallic TiOx, insulating TiOy) is reported. Compared with Pt/Ti/ZnO/Pt cells, more reliable and reproducible RS operation was observed in Pt/TiOx (or TiOy)/ZnO/Pt cells, particularly with insulating TiOy, because Ti sub-oxide layers play the role of oxygen reservoirs that help rupture the conducting filament. By comparison, Pt/TiOy/ZnO/Pt cells exhibited the best performance, with a large on/off ratio (∼105) at a read voltage of 0.4 V, and highly stable low- and high-resistive state operation for 100 direct-current sweep cycles.

Original languageEnglish
Article number015104
JournalJournal of Physics D: Applied Physics
Volume50
Issue number1
DOIs
Publication statusPublished - 2017 Jan 11

Bibliographical note

Funding Information:
This work was supported by a National Research Foundation of Korea (NRF) grant funded by the Korean government (Ministry of Science, ICT and Future Planning, No. 2016R1A3B1908249). The authors are also grateful for the support from Samsung semiconductor research center at Korea University.

Publisher Copyright:
© 2016 IOP Publishing Ltd.

Keywords

  • memristor
  • oxygen reservoir
  • resistive switching
  • zince oxide

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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