Improvement in conductance modulation linearity of artificial synapses based on NaNbO3 memristor

Jong Un Woo; Hyun Gyu Hwang; Sung Mean Park; Tae Gon Lee; Sahn Nahm

doi:10.1016/j.apmt.2020.100582

Improvement in conductance modulation linearity of artificial synapses based on NaNbO₃ memristor

Jong Un Woo, Hyun Gyu Hwang, Sung Mean Park, Tae Gon Lee, Sahn Nahm

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

A crystalline NaNbO₃ (NN) film was deposited on the TiN/SiO₂/Si (T-S) substrate at 300 °C by using the pulsed laser deposition method. The NN film that was annealed at 300 °C under 5 Torr O₂ atmosphere displays a typical bipolar switching curve. Growth and dissociation of the oxygen vacancy filament is responsible for the switching property of this NN memristor. This NN memristor shows good biological synaptic properties, but displays a non-linear conductance modulation with the application of an identical pulse. The non-linear conductance modulation is related to the non-linear growth of the oxygen vacancy filament that is controlled by two growth mechanisms (the fast redox process and the slow oxygen ion diffusion process) with different growth rates. The NN memristor was annealed under 10 Torr N₂ atmosphere to increase the number of oxygen vacancies, and it displayed improved conductance modulation linearity. The filament in this NN film can be grown linearly and the redox process became the main growth mechanism. Therefore, the conductance modulation linearity can be improved by increasing the number of oxygen vacancies, and this method can be applied to other memristors.

Original language	English
Article number	100582
Journal	Applied Materials Today
Volume	19
DOIs	https://doi.org/10.1016/j.apmt.2020.100582
Publication status	Published - 2020 Jun

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We thank the KU-KIST graduate school program of Korea University.

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University.

Publisher Copyright:
© 2020 Elsevier Ltd

Keywords

Bipolar resistive switching
Conductance modulation linearity
Neuromorphic computing
Oxide memristor
Oxygen vacancy filament
Synaptic plasticity

ASJC Scopus subject areas

General Materials Science

Access to Document

10.1016/j.apmt.2020.100582

Cite this

@article{9108bd81fb2f4d9d94502cf2df8f0d51,

title = "Improvement in conductance modulation linearity of artificial synapses based on NaNbO3 memristor",

abstract = "A crystalline NaNbO3 (NN) film was deposited on the TiN/SiO2/Si (T-S) substrate at 300 °C by using the pulsed laser deposition method. The NN film that was annealed at 300 °C under 5 Torr O2 atmosphere displays a typical bipolar switching curve. Growth and dissociation of the oxygen vacancy filament is responsible for the switching property of this NN memristor. This NN memristor shows good biological synaptic properties, but displays a non-linear conductance modulation with the application of an identical pulse. The non-linear conductance modulation is related to the non-linear growth of the oxygen vacancy filament that is controlled by two growth mechanisms (the fast redox process and the slow oxygen ion diffusion process) with different growth rates. The NN memristor was annealed under 10 Torr N2 atmosphere to increase the number of oxygen vacancies, and it displayed improved conductance modulation linearity. The filament in this NN film can be grown linearly and the redox process became the main growth mechanism. Therefore, the conductance modulation linearity can be improved by increasing the number of oxygen vacancies, and this method can be applied to other memristors.",

keywords = "Bipolar resistive switching, Conductance modulation linearity, Neuromorphic computing, Oxide memristor, Oxygen vacancy filament, Synaptic plasticity",

author = "Woo, {Jong Un} and Hwang, {Hyun Gyu} and Park, {Sung Mean} and Lee, {Tae Gon} and Sahn Nahm",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We thank the KU-KIST graduate school program of Korea University. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: {\textcopyright} 2020 Elsevier Ltd",

year = "2020",

month = jun,

doi = "10.1016/j.apmt.2020.100582",

language = "English",

volume = "19",

journal = "Applied Materials Today",

issn = "2352-9407",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Improvement in conductance modulation linearity of artificial synapses based on NaNbO3 memristor

AU - Woo, Jong Un

AU - Hwang, Hyun Gyu

AU - Park, Sung Mean

AU - Lee, Tae Gon

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning ( 2017R1A2B4007189 ). We thank the KU-KIST graduate school program of Korea University. Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). We thank the KU-KIST graduate school program of Korea University. Publisher Copyright: © 2020 Elsevier Ltd

PY - 2020/6

Y1 - 2020/6

N2 - A crystalline NaNbO3 (NN) film was deposited on the TiN/SiO2/Si (T-S) substrate at 300 °C by using the pulsed laser deposition method. The NN film that was annealed at 300 °C under 5 Torr O2 atmosphere displays a typical bipolar switching curve. Growth and dissociation of the oxygen vacancy filament is responsible for the switching property of this NN memristor. This NN memristor shows good biological synaptic properties, but displays a non-linear conductance modulation with the application of an identical pulse. The non-linear conductance modulation is related to the non-linear growth of the oxygen vacancy filament that is controlled by two growth mechanisms (the fast redox process and the slow oxygen ion diffusion process) with different growth rates. The NN memristor was annealed under 10 Torr N2 atmosphere to increase the number of oxygen vacancies, and it displayed improved conductance modulation linearity. The filament in this NN film can be grown linearly and the redox process became the main growth mechanism. Therefore, the conductance modulation linearity can be improved by increasing the number of oxygen vacancies, and this method can be applied to other memristors.

AB - A crystalline NaNbO3 (NN) film was deposited on the TiN/SiO2/Si (T-S) substrate at 300 °C by using the pulsed laser deposition method. The NN film that was annealed at 300 °C under 5 Torr O2 atmosphere displays a typical bipolar switching curve. Growth and dissociation of the oxygen vacancy filament is responsible for the switching property of this NN memristor. This NN memristor shows good biological synaptic properties, but displays a non-linear conductance modulation with the application of an identical pulse. The non-linear conductance modulation is related to the non-linear growth of the oxygen vacancy filament that is controlled by two growth mechanisms (the fast redox process and the slow oxygen ion diffusion process) with different growth rates. The NN memristor was annealed under 10 Torr N2 atmosphere to increase the number of oxygen vacancies, and it displayed improved conductance modulation linearity. The filament in this NN film can be grown linearly and the redox process became the main growth mechanism. Therefore, the conductance modulation linearity can be improved by increasing the number of oxygen vacancies, and this method can be applied to other memristors.

KW - Bipolar resistive switching

KW - Conductance modulation linearity

KW - Neuromorphic computing

KW - Oxide memristor

KW - Oxygen vacancy filament

KW - Synaptic plasticity

UR - http://www.scopus.com/inward/record.url?scp=85078664451&partnerID=8YFLogxK

U2 - 10.1016/j.apmt.2020.100582

DO - 10.1016/j.apmt.2020.100582

M3 - Article

AN - SCOPUS:85078664451

SN - 2352-9407

VL - 19

JO - Applied Materials Today

JF - Applied Materials Today

M1 - 100582

ER -