Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film

Jong Woo Kim, Hyun Kyu Seo, Su Yeon Lee, Minsoo Park, Min Kyu Yang, Byeong Kwon Ju

Research output: Contribution to journalArticlepeer-review

Abstract

This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO4 (a-IGZO) channel layer. TFTs with single-layer Ta2O5 and dual-layer Ta2O5/SiO2 gate insulators were fabricated on a glass substrate. An evaluation of the insulating film using the MIM (Metal-Insulator-Metal) structure confirmed its electrical characteristics. Microscopic imaging showed that the dual-layer Ta2O5/SiO2 dielectric significantly improved surface characteristics. A reduction in the leakage current, better on/off ratios, and a decreased subthreshold swing (SS) compared to a single-layer Ta2O5 dielectric were reported. The dual-layer insulator composed of SiO2/Ta2O5 was highly effective in improving device characteristics.

Original languageEnglish
Article number1663
JournalMetals
Volume12
Issue number10
DOIs
Publication statusPublished - 2022 Oct

Bibliographical note

Publisher Copyright:
© 2022 by the authors.

Keywords

  • a-IGZO
  • dual-layer dielectric
  • high-K
  • oxide TFT

ASJC Scopus subject areas

  • General Materials Science
  • Metals and Alloys

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