Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film

Jong Woo Kim; Hyun Kyu Seo; Su Yeon Lee; Minsoo Park; Min Kyu Yang; Byeong Kwon Ju

doi:10.3390/met12101663

Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film

Jong Woo Kim
, Hyun Kyu Seo
, Su Yeon Lee
, Minsoo Park
, Min Kyu Yang^*
, Byeong Kwon Ju^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO₄ (a-IGZO) channel layer. TFTs with single-layer Ta₂O₅ and dual-layer Ta₂O₅/SiO₂ gate insulators were fabricated on a glass substrate. An evaluation of the insulating film using the MIM (Metal-Insulator-Metal) structure confirmed its electrical characteristics. Microscopic imaging showed that the dual-layer Ta₂O₅/SiO₂ dielectric significantly improved surface characteristics. A reduction in the leakage current, better on/off ratios, and a decreased subthreshold swing (SS) compared to a single-layer Ta₂O₅ dielectric were reported. The dual-layer insulator composed of SiO₂/Ta₂O₅ was highly effective in improving device characteristics.

Original language	English
Article number	1663
Journal	Metals
Volume	12
Issue number	10
DOIs	https://doi.org/10.3390/met12101663
Publication status	Published - 2022 Oct

Bibliographical note

Publisher Copyright:
© 2022 by the authors.

Keywords

a-IGZO
dual-layer dielectric
high-K
oxide TFT

ASJC Scopus subject areas

General Materials Science
Metals and Alloys

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10.3390/met12101663

Cite this

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title = "Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film",

abstract = "This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO4 (a-IGZO) channel layer. TFTs with single-layer Ta2O5 and dual-layer Ta2O5/SiO2 gate insulators were fabricated on a glass substrate. An evaluation of the insulating film using the MIM (Metal-Insulator-Metal) structure confirmed its electrical characteristics. Microscopic imaging showed that the dual-layer Ta2O5/SiO2 dielectric significantly improved surface characteristics. A reduction in the leakage current, better on/off ratios, and a decreased subthreshold swing (SS) compared to a single-layer Ta2O5 dielectric were reported. The dual-layer insulator composed of SiO2/Ta2O5 was highly effective in improving device characteristics.",

keywords = "a-IGZO, dual-layer dielectric, high-K, oxide TFT",

author = "Kim, \{Jong Woo\} and Seo, \{Hyun Kyu\} and Lee, \{Su Yeon\} and Minsoo Park and Yang, \{Min Kyu\} and Ju, \{Byeong Kwon\}",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors.",

year = "2022",

month = oct,

doi = "10.3390/met12101663",

language = "English",

volume = "12",

journal = "Metals",

issn = "2075-4701",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

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TY - JOUR

T1 - Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film

AU - Kim, Jong Woo

AU - Seo, Hyun Kyu

AU - Lee, Su Yeon

AU - Park, Minsoo

AU - Yang, Min Kyu

AU - Ju, Byeong Kwon

PY - 2022/10

Y1 - 2022/10

N2 - This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO4 (a-IGZO) channel layer. TFTs with single-layer Ta2O5 and dual-layer Ta2O5/SiO2 gate insulators were fabricated on a glass substrate. An evaluation of the insulating film using the MIM (Metal-Insulator-Metal) structure confirmed its electrical characteristics. Microscopic imaging showed that the dual-layer Ta2O5/SiO2 dielectric significantly improved surface characteristics. A reduction in the leakage current, better on/off ratios, and a decreased subthreshold swing (SS) compared to a single-layer Ta2O5 dielectric were reported. The dual-layer insulator composed of SiO2/Ta2O5 was highly effective in improving device characteristics.

AB - This study investigates the effect of gate insulators on thin-film transistors (TFTs) using an amorphous InGaZnO4 (a-IGZO) channel layer. TFTs with single-layer Ta2O5 and dual-layer Ta2O5/SiO2 gate insulators were fabricated on a glass substrate. An evaluation of the insulating film using the MIM (Metal-Insulator-Metal) structure confirmed its electrical characteristics. Microscopic imaging showed that the dual-layer Ta2O5/SiO2 dielectric significantly improved surface characteristics. A reduction in the leakage current, better on/off ratios, and a decreased subthreshold swing (SS) compared to a single-layer Ta2O5 dielectric were reported. The dual-layer insulator composed of SiO2/Ta2O5 was highly effective in improving device characteristics.

KW - a-IGZO

KW - dual-layer dielectric

KW - high-K

KW - oxide TFT

UR - https://www.scopus.com/pages/publications/85140896096

U2 - 10.3390/met12101663

DO - 10.3390/met12101663

M3 - Article

AN - SCOPUS:85140896096

SN - 2075-4701

VL - 12

JO - Metals

JF - Metals

IS - 10

M1 - 1663

ER -

Improvement in Electrical Stability of a-IGZO TFTs Using Thinner Dual-Layer Dielectric Film

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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