Improvement in tunability and dielectric loss of bstz ferroelectric thin films using post-annealing

Keyphrases

• Post-annealing 100%
• Dielectric Loss 100%
• Tunability 100%
• Ferroelectric Thin Film 100%
• Dielectric Constant 83%
• Preferred Orientation 33%
• Dielectric Properties 33%
• Oxygen Pressure 33%
• Dielectric Tunability 33%
• Microstructure 16%
• Pulsed Laser Deposition 16%
• Microwave Dielectric Properties 16%
• Thermal Conductivity 16%
• Electric Field (E-field) 16%
• Annealing 16%
• Phase Shifter 16%
• Ferroelectric Materials 16%
• Deposition Temperature 16%
• Grain Size 16%
• Deposition Conditions 16%
• Oxygen Vacancy 16%
• Simple Cubic 16%
• Cubic Perovskite Structure 16%
• Orientation Dependence 16%
• Delay Line 16%
• Unit Cell Volume 16%
• Post-annealing Condition 16%
• Tunable Oscillators 16%
• Ion Polarizability 16%

Material Science

• Annealing 100%
• Ferroelectric Thin Films 100%
• Dielectric Material 100%
• Permittivity 83%
• Dielectric Property 50%
• Thin Films 33%
• Ferroelectric Material 16%
• Pulsed Laser Deposition 16%
• Thermal Conductivity 16%
• Grain Size 16%
• Oxygen Vacancy 16%