Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers

Ho Young Chung, Kie Young Woo, Su Jin Kim, Tae Geun Kim

Research output: Contribution to journalComment/debatepeer-review

10 Citations (Scopus)


We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.

Original languageEnglish
Pages (from-to)282-286
Number of pages5
JournalOptics Communications
Publication statusPublished - 2014 Nov 15

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government (No. 2011-0028769 ).

Copyright 2018 Elsevier B.V., All rights reserved.


  • Efficiency droop
  • Internal quantum efficiency
  • Light-emitting diodes
  • Numerical simulation
  • Quantum well and barrier

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering


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