Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers

Ho Young Chung; Kie Young Woo; Su Jin Kim; Tae Geun Kim

doi:10.1016/j.optcom.2014.06.010

Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers

Ho Young Chung, Kie Young Woo, Su Jin Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Comment/debate › peer-review

10 Citations (Scopus)

Abstract

We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.

Original language	English
Pages (from-to)	282-286
Number of pages	5
Journal	Optics Communications
Volume	331
DOIs	https://doi.org/10.1016/j.optcom.2014.06.010
Publication status	Published - 2014 Nov 15

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government (No. 2011-0028769 ).

Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.

Keywords

Efficiency droop
Internal quantum efficiency
Light-emitting diodes
Numerical simulation
Quantum well and barrier

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physical and Theoretical Chemistry
Electrical and Electronic Engineering

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10.1016/j.optcom.2014.06.010

Cite this

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title = "Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers",

abstract = "We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.",

keywords = "Efficiency droop, Internal quantum efficiency, Light-emitting diodes, Numerical simulation, Quantum well and barrier",

author = "Chung, {Ho Young} and Woo, {Kie Young} and Kim, {Su Jin} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government (No. 2011-0028769 ). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2014",

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day = "15",

doi = "10.1016/j.optcom.2014.06.010",

language = "English",

volume = "331",

pages = "282--286",

journal = "Optics Communications",

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T1 - Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers

AU - Chung, Ho Young

AU - Woo, Kie Young

AU - Kim, Su Jin

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korean government (No. 2011-0028769 ). Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2014/11/15

Y1 - 2014/11/15

N2 - We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.

AB - We present a numerical study on the effect of graded indium well and barrier structures having different compositions in InGaN/GaN-based light-emitting diodes (LEDs) on their optical and electrical properties. Compared with conventional LEDs, the output power of the proposed LEDs was found to increase by a factor of ~2.4, and the efficiency droop reduced greatly. In addition, the turn-on voltage was reduced by using an InGaN well and barrier structure having a graded indium composition. These improvements are believed to result from the enhancement in the hole-injection efficiency, as well as the spatial distribution overlap between the electrons and holes in multiple quantum wells.

KW - Efficiency droop

KW - Internal quantum efficiency

KW - Light-emitting diodes

KW - Numerical simulation

KW - Quantum well and barrier

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DO - 10.1016/j.optcom.2014.06.010

M3 - Comment/debate

AN - SCOPUS:84904024804

SN - 0030-4018

VL - 331

SP - 282

EP - 286

JO - Optics Communications

JF - Optics Communications

ER -

Improvement of blue InGaN/GaN light-emitting diodes with graded indium composition wells and barriers

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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