Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor through the Increase of the Number of Oxygen Vacancies

Sung Mean Park; Hyun Gyu Hwang; Jong Un Woo; Woong Hee Lee; Seok June Chae; Sahn Nahm

doi:10.1021/acsami.9b18794

Improvement of Conductance Modulation Linearity in a Cu²⁺-Doped KNbO₃ Memristor through the Increase of the Number of Oxygen Vacancies

Sung Mean Park, Hyun Gyu Hwang, Jong Un Woo, Woong Hee Lee, Seok June Chae, Sahn Nahm

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

The Pt/KNbO₃/TiN/Si (KN) memristor exhibits various biological synaptic properties. However, it also displays nonlinear conductance modulation with the application of identical pulses, indicating that it should be improved for neuromorphic applications. The abrupt change of the conductance originates from the inhomogeneous growth/dissolution of oxygen vacancy filaments in the KN film. The change of the filaments in a KN film is controlled by two mechanisms with different growth/dissolution rates: a redox process with a fast rate and an oxygen vacancy diffusion process with a slow rate. Therefore, the conductance modulation linearity can be improved if the growth/dissolution of the filaments is controlled by only one mechanism. When the number of oxygen vacancies in the KN film was increased through doping of Cu²⁺ ions, the growth/dissolution of the filaments in the Cu²⁺-doped KN (CKN) film was mainly influenced by the redox process of oxygen vacancies. Therefore, the CKN film exhibited improved conductance modulation linearity, confirming that the linearity of conductance modulation can be improved by increasing the number of oxygen vacancies in the memristor. This method can be applied to other memristors to improve the linearity of conductance modulation. The CKN memristor also provides excellent biological synaptic characteristics for neuromorphic computing systems.

Original language	English
Pages (from-to)	1069-1077
Number of pages	9
Journal	ACS Applied Materials and Interfaces
Volume	12
Issue number	1
DOIs	https://doi.org/10.1021/acsami.9b18794
Publication status	Published - 2020 Jan 8

Keywords

artificial synapse
conductance modulation linearity
copper ions doping
neuromorphic device
oxygen vacancy filaments
potassium niobate memristors

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1021/acsami.9b18794

Cite this

@article{705ba3ac78964ebfa2f90739b33ad089,

title = "Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor through the Increase of the Number of Oxygen Vacancies",

abstract = "The Pt/KNbO3/TiN/Si (KN) memristor exhibits various biological synaptic properties. However, it also displays nonlinear conductance modulation with the application of identical pulses, indicating that it should be improved for neuromorphic applications. The abrupt change of the conductance originates from the inhomogeneous growth/dissolution of oxygen vacancy filaments in the KN film. The change of the filaments in a KN film is controlled by two mechanisms with different growth/dissolution rates: a redox process with a fast rate and an oxygen vacancy diffusion process with a slow rate. Therefore, the conductance modulation linearity can be improved if the growth/dissolution of the filaments is controlled by only one mechanism. When the number of oxygen vacancies in the KN film was increased through doping of Cu2+ ions, the growth/dissolution of the filaments in the Cu2+-doped KN (CKN) film was mainly influenced by the redox process of oxygen vacancies. Therefore, the CKN film exhibited improved conductance modulation linearity, confirming that the linearity of conductance modulation can be improved by increasing the number of oxygen vacancies in the memristor. This method can be applied to other memristors to improve the linearity of conductance modulation. The CKN memristor also provides excellent biological synaptic characteristics for neuromorphic computing systems.",

keywords = "artificial synapse, conductance modulation linearity, copper ions doping, neuromorphic device, oxygen vacancy filaments, potassium niobate memristors",

author = "Park, {Sung Mean} and Hwang, {Hyun Gyu} and Woo, {Jong Un} and Lee, {Woong Hee} and Chae, {Seok June} and Sahn Nahm",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). The authors thank the KU-KIST graduate school program of Korea University. Publisher Copyright: Copyright {\textcopyright} 2019 American Chemical Society.",

year = "2020",

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doi = "10.1021/acsami.9b18794",

language = "English",

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T1 - Improvement of Conductance Modulation Linearity in a Cu2+-Doped KNbO3 Memristor through the Increase of the Number of Oxygen Vacancies

AU - Park, Sung Mean

AU - Hwang, Hyun Gyu

AU - Woo, Jong Un

AU - Lee, Woong Hee

AU - Chae, Seok June

AU - Nahm, Sahn

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). The authors thank the KU-KIST graduate school program of Korea University. Publisher Copyright: Copyright © 2019 American Chemical Society.

PY - 2020/1/8

Y1 - 2020/1/8

N2 - The Pt/KNbO3/TiN/Si (KN) memristor exhibits various biological synaptic properties. However, it also displays nonlinear conductance modulation with the application of identical pulses, indicating that it should be improved for neuromorphic applications. The abrupt change of the conductance originates from the inhomogeneous growth/dissolution of oxygen vacancy filaments in the KN film. The change of the filaments in a KN film is controlled by two mechanisms with different growth/dissolution rates: a redox process with a fast rate and an oxygen vacancy diffusion process with a slow rate. Therefore, the conductance modulation linearity can be improved if the growth/dissolution of the filaments is controlled by only one mechanism. When the number of oxygen vacancies in the KN film was increased through doping of Cu2+ ions, the growth/dissolution of the filaments in the Cu2+-doped KN (CKN) film was mainly influenced by the redox process of oxygen vacancies. Therefore, the CKN film exhibited improved conductance modulation linearity, confirming that the linearity of conductance modulation can be improved by increasing the number of oxygen vacancies in the memristor. This method can be applied to other memristors to improve the linearity of conductance modulation. The CKN memristor also provides excellent biological synaptic characteristics for neuromorphic computing systems.

AB - The Pt/KNbO3/TiN/Si (KN) memristor exhibits various biological synaptic properties. However, it also displays nonlinear conductance modulation with the application of identical pulses, indicating that it should be improved for neuromorphic applications. The abrupt change of the conductance originates from the inhomogeneous growth/dissolution of oxygen vacancy filaments in the KN film. The change of the filaments in a KN film is controlled by two mechanisms with different growth/dissolution rates: a redox process with a fast rate and an oxygen vacancy diffusion process with a slow rate. Therefore, the conductance modulation linearity can be improved if the growth/dissolution of the filaments is controlled by only one mechanism. When the number of oxygen vacancies in the KN film was increased through doping of Cu2+ ions, the growth/dissolution of the filaments in the Cu2+-doped KN (CKN) film was mainly influenced by the redox process of oxygen vacancies. Therefore, the CKN film exhibited improved conductance modulation linearity, confirming that the linearity of conductance modulation can be improved by increasing the number of oxygen vacancies in the memristor. This method can be applied to other memristors to improve the linearity of conductance modulation. The CKN memristor also provides excellent biological synaptic characteristics for neuromorphic computing systems.

KW - artificial synapse

KW - conductance modulation linearity

KW - copper ions doping

KW - neuromorphic device

KW - oxygen vacancy filaments

KW - potassium niobate memristors

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