The Pt/KNbO3/TiN/Si (KN) memristor exhibits various biological synaptic properties. However, it also displays nonlinear conductance modulation with the application of identical pulses, indicating that it should be improved for neuromorphic applications. The abrupt change of the conductance originates from the inhomogeneous growth/dissolution of oxygen vacancy filaments in the KN film. The change of the filaments in a KN film is controlled by two mechanisms with different growth/dissolution rates: a redox process with a fast rate and an oxygen vacancy diffusion process with a slow rate. Therefore, the conductance modulation linearity can be improved if the growth/dissolution of the filaments is controlled by only one mechanism. When the number of oxygen vacancies in the KN film was increased through doping of Cu2+ ions, the growth/dissolution of the filaments in the Cu2+-doped KN (CKN) film was mainly influenced by the redox process of oxygen vacancies. Therefore, the CKN film exhibited improved conductance modulation linearity, confirming that the linearity of conductance modulation can be improved by increasing the number of oxygen vacancies in the memristor. This method can be applied to other memristors to improve the linearity of conductance modulation. The CKN memristor also provides excellent biological synaptic characteristics for neuromorphic computing systems.
Bibliographical noteFunding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2017R1A2B4007189). The authors thank the KU-KIST graduate school program of Korea University.
Copyright © 2019 American Chemical Society.
- artificial synapse
- conductance modulation linearity
- copper ions doping
- neuromorphic device
- oxygen vacancy filaments
- potassium niobate memristors
ASJC Scopus subject areas
- Materials Science(all)