Improvement of field emission from printed carbon nanotubes by a critical bias field

H. J. Lee; S. I. Moon; J. K. Kim; Y. D. Lee; S. Nahm; J. E. Yoo; J. H. Han; Y. H. Lee; S. W. Hwang; B. K. Ju

doi:10.1063/1.1953889

Improvement of field emission from printed carbon nanotubes by a critical bias field

H. J. Lee, S. I. Moon, J. K. Kim, Y. D. Lee, S. Nahm, J. E. Yoo, J. H. Han, Y. H. Lee, S. W. Hwang, B. K. Ju

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19 Citations (Scopus)

Abstract

By applying a critical bias field instead of conventional surface treatments, the electron emission properties of screen-printed nanotubes were investigated through scanning electron microscopy and emission current-voltage characteristics. After the surface treatment, at the bias field of 2.5 Vμm, the electron emission current density with good uniform emission sites reached the value of 2.13 mA cm2, which was 400 times higher than that of the untreated sample, and the turn-on voltage decreased markedly from 700 to 460 V. In addition, the enhancement of the alignment of carbon nanotubes to the vertical direction was observed, resulting in an increase in the field-enhancement factor.

Original language	English
Article number	016107
Journal	Journal of Applied Physics
Volume	98
Issue number	1
DOIs	https://doi.org/10.1063/1.1953889
Publication status	Published - 2005 Jul 1

ASJC Scopus subject areas

Physics and Astronomy(all)

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10.1063/1.1953889

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title = "Improvement of field emission from printed carbon nanotubes by a critical bias field",

abstract = "By applying a critical bias field instead of conventional surface treatments, the electron emission properties of screen-printed nanotubes were investigated through scanning electron microscopy and emission current-voltage characteristics. After the surface treatment, at the bias field of 2.5 Vμm, the electron emission current density with good uniform emission sites reached the value of 2.13 mA cm2, which was 400 times higher than that of the untreated sample, and the turn-on voltage decreased markedly from 700 to 460 V. In addition, the enhancement of the alignment of carbon nanotubes to the vertical direction was observed, resulting in an increase in the field-enhancement factor.",

author = "Lee, {H. J.} and Moon, {S. I.} and Kim, {J. K.} and Lee, {Y. D.} and S. Nahm and Yoo, {J. E.} and Han, {J. H.} and Lee, {Y. H.} and Hwang, {S. W.} and Ju, {B. K.}",

note = "Funding Information: This work was supported by the Ministry of Commerce, Industry, and Energy of Korea through a Components and Materials Technology Development project.",

year = "2005",

month = jul,

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doi = "10.1063/1.1953889",

language = "English",

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TY - JOUR

T1 - Improvement of field emission from printed carbon nanotubes by a critical bias field

AU - Lee, H. J.

AU - Moon, S. I.

AU - Kim, J. K.

AU - Lee, Y. D.

AU - Nahm, S.

AU - Yoo, J. E.

AU - Han, J. H.

AU - Lee, Y. H.

AU - Hwang, S. W.

AU - Ju, B. K.

N1 - Funding Information: This work was supported by the Ministry of Commerce, Industry, and Energy of Korea through a Components and Materials Technology Development project.

PY - 2005/7/1

Y1 - 2005/7/1

N2 - By applying a critical bias field instead of conventional surface treatments, the electron emission properties of screen-printed nanotubes were investigated through scanning electron microscopy and emission current-voltage characteristics. After the surface treatment, at the bias field of 2.5 Vμm, the electron emission current density with good uniform emission sites reached the value of 2.13 mA cm2, which was 400 times higher than that of the untreated sample, and the turn-on voltage decreased markedly from 700 to 460 V. In addition, the enhancement of the alignment of carbon nanotubes to the vertical direction was observed, resulting in an increase in the field-enhancement factor.

AB - By applying a critical bias field instead of conventional surface treatments, the electron emission properties of screen-printed nanotubes were investigated through scanning electron microscopy and emission current-voltage characteristics. After the surface treatment, at the bias field of 2.5 Vμm, the electron emission current density with good uniform emission sites reached the value of 2.13 mA cm2, which was 400 times higher than that of the untreated sample, and the turn-on voltage decreased markedly from 700 to 460 V. In addition, the enhancement of the alignment of carbon nanotubes to the vertical direction was observed, resulting in an increase in the field-enhancement factor.

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U2 - 10.1063/1.1953889

DO - 10.1063/1.1953889

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VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Improvement of field emission from printed carbon nanotubes by a critical bias field

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