Abstract
Metal silicide on silicon-tip field-emission arrays (FEAs) seems to be a promising way to improve the performance of the silicon-tip FEAs. The niobium-silicide layer was formed on a silicon surface. The Nb-silicide FEAs were prepared by a silicidation process. The formation of the Nb-silicide layer on a silicon surface was confirmed by using X-ray diffractometry (XRD). The current-voltage characteristics and the current fluctuation were measured under an ultra-high-vacuum environment using a Kiethley SMU 237 meter. The turn-on voltage of silicon-tip FEAs was decreased from 64 to 47 V by the formation of the Nb-silicide layer on silicon tips, and the emission current fluctuation (2%) was more stable than that of conventional silicon-tip FEAs.
| Original language | English |
|---|---|
| Pages (from-to) | 241-243 |
| Number of pages | 3 |
| Journal | Journal of the Society for Information Display |
| Volume | 7 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 1999 |
| Externally published | Yes |
| Event | The 1999 SID International Symposium - San Jose, CA, USA Duration: 1999 May 18 → 1999 May 20 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering