Improvement of grain-boundary conduction in gadolinia-doped ceria via post-sintering heat treatment

Dong Suk Kim; Pyeong Seok Cho; Jong Heun Lee; Doh Yeon Kim; Sung Bo Lee

doi:10.1016/j.ssi.2005.12.014

Improvement of grain-boundary conduction in gadolinia-doped ceria via post-sintering heat treatment

Dong Suk Kim, Pyeong Seok Cho, Jong Heun Lee, Doh Yeon Kim, Sung Bo Lee

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A new approach to improve the grain-boundary conduction in 10 mol% gadolinia-doped ceria (GDC) without any additives was suggested. The grain-boundary conductivity of GDC specimen containing 500 ppm of SiO₂ was increased ∼4 times by post-sintering heat-treatment (HT) at 1350 °C for 20 h. The grain-boundary conductivity showed the maximum at HT temperature of 1350 °C and enhanced with increasing HT time from 0 to 20 h. The mechanism for scavenging resistive siliceous phase by post-sintering HT was investigated with the variation of HT temperatures, HT times, and HT schedules.

Original language	English
Pages (from-to)	2125-2128
Number of pages	4
Journal	Solid State Ionics
Volume	177
Issue number	19-25 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.ssi.2005.12.014
Publication status	Published - 2006 Oct 15

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant (KRF-2004-041-D00333).

Keywords

Gadolinia-doped ceria (GDC)
Grain-boundary conduction
Post-sintering heat treatment
Scavenging

ASJC Scopus subject areas

General Chemistry
General Materials Science
Condensed Matter Physics

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10.1016/j.ssi.2005.12.014

Cite this

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title = "Improvement of grain-boundary conduction in gadolinia-doped ceria via post-sintering heat treatment",

abstract = "A new approach to improve the grain-boundary conduction in 10 mol% gadolinia-doped ceria (GDC) without any additives was suggested. The grain-boundary conductivity of GDC specimen containing 500 ppm of SiO2 was increased ∼4 times by post-sintering heat-treatment (HT) at 1350 °C for 20 h. The grain-boundary conductivity showed the maximum at HT temperature of 1350 °C and enhanced with increasing HT time from 0 to 20 h. The mechanism for scavenging resistive siliceous phase by post-sintering HT was investigated with the variation of HT temperatures, HT times, and HT schedules.",

keywords = "Gadolinia-doped ceria (GDC), Grain-boundary conduction, Post-sintering heat treatment, Scavenging",

author = "Kim, {Dong Suk} and Cho, {Pyeong Seok} and Lee, {Jong Heun} and Kim, {Doh Yeon} and Lee, {Sung Bo}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2004-041-D00333).",

year = "2006",

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doi = "10.1016/j.ssi.2005.12.014",

language = "English",

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journal = "Solid State Ionics",

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T1 - Improvement of grain-boundary conduction in gadolinia-doped ceria via post-sintering heat treatment

AU - Kim, Dong Suk

AU - Cho, Pyeong Seok

AU - Lee, Jong Heun

AU - Kim, Doh Yeon

AU - Lee, Sung Bo

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant (KRF-2004-041-D00333).

PY - 2006/10/15

Y1 - 2006/10/15

N2 - A new approach to improve the grain-boundary conduction in 10 mol% gadolinia-doped ceria (GDC) without any additives was suggested. The grain-boundary conductivity of GDC specimen containing 500 ppm of SiO2 was increased ∼4 times by post-sintering heat-treatment (HT) at 1350 °C for 20 h. The grain-boundary conductivity showed the maximum at HT temperature of 1350 °C and enhanced with increasing HT time from 0 to 20 h. The mechanism for scavenging resistive siliceous phase by post-sintering HT was investigated with the variation of HT temperatures, HT times, and HT schedules.

AB - A new approach to improve the grain-boundary conduction in 10 mol% gadolinia-doped ceria (GDC) without any additives was suggested. The grain-boundary conductivity of GDC specimen containing 500 ppm of SiO2 was increased ∼4 times by post-sintering heat-treatment (HT) at 1350 °C for 20 h. The grain-boundary conductivity showed the maximum at HT temperature of 1350 °C and enhanced with increasing HT time from 0 to 20 h. The mechanism for scavenging resistive siliceous phase by post-sintering HT was investigated with the variation of HT temperatures, HT times, and HT schedules.

KW - Gadolinia-doped ceria (GDC)

KW - Grain-boundary conduction

KW - Post-sintering heat treatment

KW - Scavenging

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DO - 10.1016/j.ssi.2005.12.014

M3 - Article

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SN - 0167-2738

VL - 177

SP - 2125

EP - 2128

JO - Solid State Ionics

JF - Solid State Ionics

IS - 19-25 SPEC. ISS.

ER -

Improvement of grain-boundary conduction in gadolinia-doped ceria via post-sintering heat treatment

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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