Abstract
A new approach to improve the grain-boundary conduction in 10 mol% gadolinia-doped ceria (GDC) without any additives was suggested. The grain-boundary conductivity of GDC specimen containing 500 ppm of SiO2 was increased ∼4 times by post-sintering heat-treatment (HT) at 1350 °C for 20 h. The grain-boundary conductivity showed the maximum at HT temperature of 1350 °C and enhanced with increasing HT time from 0 to 20 h. The mechanism for scavenging resistive siliceous phase by post-sintering HT was investigated with the variation of HT temperatures, HT times, and HT schedules.
Original language | English |
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Pages (from-to) | 2125-2128 |
Number of pages | 4 |
Journal | Solid State Ionics |
Volume | 177 |
Issue number | 19-25 SPEC. ISS. |
DOIs | |
Publication status | Published - 2006 Oct 15 |
Keywords
- Gadolinia-doped ceria (GDC)
- Grain-boundary conduction
- Post-sintering heat treatment
- Scavenging
ASJC Scopus subject areas
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics