Abstract
A micro- and nanoscale complex structure made of a high refractive index polymer (n = 2.08) was formed on the ITO electrode layer of an edge-emitting type GaN blue light-emitting diode (LED), in order to improve the photon extraction efficiency by suppressing total internal reflection of photons. The nanoimprint lithography process was used to form the micro- and nanoscale complex structures, using a polymer resin with dispersed TiO2 nanoparticles as an imprint resin. Plasma processing, such as reactive ion etching, was used to form the micro- and nano-scale complex structure; thus, plasma-induced damage to the LED device can be avoided. Due to the high refractive index polymeric micro- and nanostructure on the ITO layer, the electroluminescence emission was increased up to 20%, compared to an identical LED that was grown on a patterned sapphire substrate to improve photon extraction efficiency.
| Original language | English |
|---|---|
| Article number | 578 |
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Nanoscale Research Letters |
| Volume | 6 |
| DOIs | |
| Publication status | Published - 2011 |
Bibliographical note
Funding Information:This work was supported by the Nano Research and Development program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (2010-0019152).
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics