Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

June O. Song; Hun Kang; I. T. Ferguson; Sung Pyo Jung; H. P. Lee; Hyun Gi Hong; Takhee Lee; Tae Yeon Seong

doi:10.1016/j.sse.2005.08.012

Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

June O. Song, Hun Kang, I. T. Ferguson, Sung Pyo Jung, H. P. Lee, Hyun Gi Hong, Takhee Lee, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530-630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.

Original language	English
Pages (from-to)	1986-1989
Number of pages	4
Journal	Solid-State Electronics
Volume	49
Issue number	12
DOIs	https://doi.org/10.1016/j.sse.2005.08.012
Publication status	Published - 2005 Dec

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.sse.2005.08.012

Cite this

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title = "Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots",

abstract = "We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530-630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.",

author = "Song, {June O.} and Hun Kang and Ferguson, {I. T.} and Jung, {Sung Pyo} and Lee, {H. P.} and Hong, {Hyun Gi} and Takhee Lee and Seong, {Tae Yeon}",

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doi = "10.1016/j.sse.2005.08.012",

language = "English",

volume = "49",

pages = "1986--1989",

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T1 - Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

AU - Song, June O.

AU - Kang, Hun

AU - Ferguson, I. T.

AU - Jung, Sung Pyo

AU - Lee, H. P.

AU - Hong, Hyun Gi

AU - Lee, Takhee

AU - Seong, Tae Yeon

PY - 2005/12

Y1 - 2005/12

N2 - We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530-630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.

AB - We report on the improvement of the electrical characteristics of GaN-based light-emitting diodes (LEDs) fabricated with Ag (1 nm)/indium tin oxide (ITO) (250 nm) p-type contacts by using Ni nanodots. As-deposited Ag/ITO contacts with and without the Ni nanodots give non-linear electrical behaviour. However, annealing the samples at 530-630 °C for 1 min in air results in ohmic behaviour. The reverse leakage current characteristics of near UV LEDs are much improved when the Ni nanodots are used. The output power (at 20 mA) of LEDs fabricated with the Ni nanodots is enhanced by a factor of 1.34 as compared with that of LEDs made without the Ni nanodots.

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DO - 10.1016/j.sse.2005.08.012

M3 - Article

AN - SCOPUS:28044446794

SN - 0038-1101

VL - 49

SP - 1986

EP - 1989

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 12

ER -

Improvement of the electrical performance of near UV GaN-based light-emitting diodes using Ni nanodots

Abstract

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