Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

Jong Ho Kim; Yong Won Lee; Hyeong Seop Im; Chan Hyoung Oh; Jong In Shim; Daesung Kang; Tae Yeon Seong; Hiroshi Amano

doi:10.1149/2.0462001JSS

Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

Jong Ho Kim, Yong Won Lee, Hyeong Seop Im, Chan Hyoung Oh, Jong In Shim, Daesung Kang, Tae Yeon Seong, Hiroshi Amano

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO₂ adhesion layers produced 22.7% higher light output at 21 A/cm² than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO₂ adhesion layers.

Original language	English
Article number	015021
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	1
DOIs	https://doi.org/10.1149/2.0462001JSS
Publication status	Published - 2020

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1149/2.0462001JSS

Cite this

@article{decf65f86df042ba85844ababe9bfce1,

title = "Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad",

abstract = "To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm2 than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers.",

author = "Kim, {Jong Ho} and Lee, {Yong Won} and Im, {Hyeong Seop} and Oh, {Chan Hyoung} and Shim, {Jong In} and Daesung Kang and Seong, {Tae Yeon} and Hiroshi Amano",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2019. Published by ECS..",

year = "2020",

doi = "10.1149/2.0462001JSS",

language = "English",

volume = "9",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "1",

}

TY - JOUR

T1 - Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

AU - Kim, Jong Ho

AU - Lee, Yong Won

AU - Im, Hyeong Seop

AU - Oh, Chan Hyoung

AU - Shim, Jong In

AU - Kang, Daesung

AU - Seong, Tae Yeon

AU - Amano, Hiroshi

PY - 2020

Y1 - 2020

N2 - To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm2 than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers.

AB - To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm2 than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers.

UR - http://www.scopus.com/inward/record.url?scp=85081715809&partnerID=8YFLogxK

U2 - 10.1149/2.0462001JSS

DO - 10.1149/2.0462001JSS

M3 - Article

AN - SCOPUS:85081715809

SN - 2162-8769

VL - 9

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 1

M1 - 015021

ER -

Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this