Abstract
To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm2 than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers.
Original language | English |
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Article number | 015021 |
Journal | ECS Journal of Solid State Science and Technology |
Volume | 9 |
Issue number | 1 |
DOIs | |
Publication status | Published - 2020 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials