Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

Jong Ho Kim; Yong Won Lee; Hyeong Seop Im; Chan Hyoung Oh; Jong In Shim; Daesung Kang; Tae Yeon Seong; Hiroshi Amano

doi:10.1149/2.0462001JSS

Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

Jong Ho Kim, Yong Won Lee, Hyeong Seop Im, Chan Hyoung Oh, Jong In Shim, Daesung Kang, Tae Yeon Seong, Hiroshi Amano

Research output: Contribution to journal › Article › peer-review

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Abstract

To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO₂ adhesion layers produced 22.7% higher light output at 21 A/cm² than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO₂ adhesion layers.

Original language	English
Article number	015021
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	1
DOIs	https://doi.org/10.1149/2.0462001JSS
Publication status	Published - 2020

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Publisher Copyright:
© The Author(s) 2019. Published by ECS..

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2.0462001JSS

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title = "Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad",

abstract = "To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm2 than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers.",

author = "Kim, {Jong Ho} and Lee, {Yong Won} and Im, {Hyeong Seop} and Oh, {Chan Hyoung} and Shim, {Jong In} and Daesung Kang and Seong, {Tae Yeon} and Hiroshi Amano",

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doi = "10.1149/2.0462001JSS",

language = "English",

volume = "9",

journal = "ECS Journal of Solid State Science and Technology",

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T1 - Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

AU - Kim, Jong Ho

AU - Lee, Yong Won

AU - Im, Hyeong Seop

AU - Oh, Chan Hyoung

AU - Shim, Jong In

AU - Kang, Daesung

AU - Seong, Tae Yeon

AU - Amano, Hiroshi

PY - 2020

Y1 - 2020

N2 - To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm2 than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers.

AB - To enhance the light output of blue InGaN-based light emitting diodes (LEDs), a buried stripe-type n-electrode, expanded stripe-type p-electrode, and reflective p-bonding pad were employed. Flip-chip (FC) LEDs with the expanded p-electrode gave forward voltages of 2.99-3.11 V at 100 mA and series resistances of 3.28-3.94 Ω. The expanded p-electrode FCLED fabricated with 375 nm-thick window and TiO2 adhesion layers produced 22.7% higher light output at 21 A/cm2 than conventional FCLEDs. The expanded p-electrode FCLEDs revealed better current spreading efficiency than the c-FCLED, indicating the importance of the use of an optimised window and TiO2 adhesion layers.

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Improvement of the Light Output of Blue InGaN-Based Light Emitting Diodes by Using a Buried Stripe-Type n-Contact and Reflective Bonding Pad

Abstract

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