Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p -type electrodes

June O. Song; J. S. Kwak; Y. Park; Tae Yeon Seong

doi:10.1063/1.1937987

Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p -type electrodes

June O. Song, J. S. Kwak, Y. Park, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

We report on the formation of highly transparent and low-resistance Cu-doped indium oxide(CIO)(3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact to p -type GaN for high-brightness light-emitting diodes (LEDs) for solid-state lighting. The CIO/ITO contacts become ohmic with specific contact resistances of ~ 10-4 Ω cm2 and give transmittance higher than 98.7% at a wavelength of 405 nm when annealed at 630°C for 1 min in air. Near UV LEDs fabricated with the annealed CIO/ITO p -type contact layers give a forward-bias voltage of 3.25 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the CIO/ITO contacts is enhanced 78% at 20 mA as compared with that of LEDs with the conventional NiAu contacts.

Original language	English
Article number	213505
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	86
Issue number	21
DOIs	https://doi.org/10.1063/1.1937987
Publication status	Published - 2005 May 23
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{ee61cca17d264d43b05a69b916c6e46c,

title = "Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p -type electrodes",

abstract = "We report on the formation of highly transparent and low-resistance Cu-doped indium oxide(CIO)(3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact to p -type GaN for high-brightness light-emitting diodes (LEDs) for solid-state lighting. The CIO/ITO contacts become ohmic with specific contact resistances of ~ 10-4 Ω cm2 and give transmittance higher than 98.7% at a wavelength of 405 nm when annealed at 630°C for 1 min in air. Near UV LEDs fabricated with the annealed CIO/ITO p -type contact layers give a forward-bias voltage of 3.25 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the CIO/ITO contacts is enhanced 78% at 20 mA as compared with that of LEDs with the conventional NiAu contacts.",

author = "Song, {June O.} and Kwak, {J. S.} and Y. Park and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation (Grant No. R01-2002-000-00356-0). The authors thank W. G. Hong (GIST) for his assistance in experiments and Dr. Miyang Kim for the TEM work.",

year = "2005",

month = may,

day = "23",

doi = "10.1063/1.1937987",

language = "English",

volume = "86",

pages = "1--3",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p -type electrodes

AU - Song, June O.

AU - Kwak, J. S.

AU - Park, Y.

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation (Grant No. R01-2002-000-00356-0). The authors thank W. G. Hong (GIST) for his assistance in experiments and Dr. Miyang Kim for the TEM work.

PY - 2005/5/23

Y1 - 2005/5/23

N2 - We report on the formation of highly transparent and low-resistance Cu-doped indium oxide(CIO)(3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact to p -type GaN for high-brightness light-emitting diodes (LEDs) for solid-state lighting. The CIO/ITO contacts become ohmic with specific contact resistances of ~ 10-4 Ω cm2 and give transmittance higher than 98.7% at a wavelength of 405 nm when annealed at 630°C for 1 min in air. Near UV LEDs fabricated with the annealed CIO/ITO p -type contact layers give a forward-bias voltage of 3.25 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the CIO/ITO contacts is enhanced 78% at 20 mA as compared with that of LEDs with the conventional NiAu contacts.

AB - We report on the formation of highly transparent and low-resistance Cu-doped indium oxide(CIO)(3 nm)/indium tin oxide (ITO) (400 nm) ohmic contact to p -type GaN for high-brightness light-emitting diodes (LEDs) for solid-state lighting. The CIO/ITO contacts become ohmic with specific contact resistances of ~ 10-4 Ω cm2 and give transmittance higher than 98.7% at a wavelength of 405 nm when annealed at 630°C for 1 min in air. Near UV LEDs fabricated with the annealed CIO/ITO p -type contact layers give a forward-bias voltage of 3.25 V at injection current of 20 mA. It is further shown that the output power of the LEDs with the CIO/ITO contacts is enhanced 78% at 20 mA as compared with that of LEDs with the conventional NiAu contacts.

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DO - 10.1063/1.1937987

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EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

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ER -

Improvement of the light output of InGaN-based light-emitting diodes using Cu-doped indium oxide/indium tin oxide p -type electrodes

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