Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer

Hwan Hee Jeong; Sang Youl Lee; Young Kyu Jeong; Kwang Ki Choi; June O. Song; Yong Hyun Lee; Tae Yeon Seong

doi:10.1149/1.3407625

Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer

Hwan Hee Jeong, Sang Youl Lee, Young Kyu Jeong, Kwang Ki Choi, June O. Song, Yong Hyun Lee, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

The light output characteristics of GaN-based vertical light emitting diodes (1×1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO₂ current blocking layer (CBL). As the CBL width increases from 0 to 20 μm, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas the reverse leakage current decreases from 4.90× 10-7 to 3.05× 10-7 A at -10 V. The output power increases with increasing CBL linewidth. Furthermore, the output power of all the samples continuously increases without saturation across the current range of 0-1000 mA.

Original language	English
Pages (from-to)	H237-H239
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	7
DOIs	https://doi.org/10.1149/1.3407625
Publication status	Published - 2010

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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@article{3774634ca74845ee86857e847f7d34b9,

title = "Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer",

abstract = "The light output characteristics of GaN-based vertical light emitting diodes (1×1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO2 current blocking layer (CBL). As the CBL width increases from 0 to 20 μm, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas the reverse leakage current decreases from 4.90× 10-7 to 3.05× 10-7 A at -10 V. The output power increases with increasing CBL linewidth. Furthermore, the output power of all the samples continuously increases without saturation across the current range of 0-1000 mA.",

author = "Jeong, {Hwan Hee} and Lee, {Sang Youl} and Jeong, {Young Kyu} and Choi, {Kwang Ki} and Song, {June O.} and Lee, {Yong Hyun} and Seong, {Tae Yeon}",

year = "2010",

doi = "10.1149/1.3407625",

language = "English",

volume = "13",

pages = "H237--H239",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society, Inc.",

number = "7",

}

TY - JOUR

T1 - Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer

AU - Jeong, Hwan Hee

AU - Lee, Sang Youl

AU - Jeong, Young Kyu

AU - Choi, Kwang Ki

AU - Song, June O.

AU - Lee, Yong Hyun

AU - Seong, Tae Yeon

PY - 2010

Y1 - 2010

N2 - The light output characteristics of GaN-based vertical light emitting diodes (1×1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO2 current blocking layer (CBL). As the CBL width increases from 0 to 20 μm, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas the reverse leakage current decreases from 4.90× 10-7 to 3.05× 10-7 A at -10 V. The output power increases with increasing CBL linewidth. Furthermore, the output power of all the samples continuously increases without saturation across the current range of 0-1000 mA.

AB - The light output characteristics of GaN-based vertical light emitting diodes (1×1 mm) fabricated by the multifunctional bonding material system have been investigated as a function of the linewidth of a SiO2 current blocking layer (CBL). As the CBL width increases from 0 to 20 μm, the forward voltage increases from 2.82 to 2.88 V at 350 mA, whereas the reverse leakage current decreases from 4.90× 10-7 to 3.05× 10-7 A at -10 V. The output power increases with increasing CBL linewidth. Furthermore, the output power of all the samples continuously increases without saturation across the current range of 0-1000 mA.

UR - http://www.scopus.com/inward/record.url?scp=77956206149&partnerID=8YFLogxK

U2 - 10.1149/1.3407625

DO - 10.1149/1.3407625

M3 - Article

AN - SCOPUS:77956206149

SN - 1099-0062

VL - 13

SP - H237-H239

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

Improvement of the light output power of GaN-based vertical light emitting diodes by a current blocking layer

Abstract

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