Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

June O. Song; Dong Seok Leem; Joon Seop Kwak; Y. Park; S. W. Chae; Tae Yeon Seong

doi:10.1109/LPT.2004.839783

Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

June O. Song, Dong Seok Leem, Joon Seop Kwak, Y. Park, S. W. Chae, Tae Yeon Seong

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1 nm)-ITO(200 nm) contacts exhibit greatly improved electrical characteristics when annealed at temperatures in the range 400 °C-600 °C for 1 min in air, yielding specific contact resistances of ∼10^-4 Ω.cm². In addition the contacts give transmittance of about 96% at 460 nm, which is far better than that of the conventionally used oxidized Ni-Au contacts. It is shown that the luminous intensity of blue LEDs fabricated with the Ag-ITO contacts is about three times higher than that of LEDs with oxidized Ni-Au contacts. This result strongly indicates that the Ag-ITO scheme can serve as a highly promising p-type ohmic contact for the realization of high brightness near ultraviolet LEDs.

Original language	English
Pages (from-to)	291-293
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	17
Issue number	2
DOIs	https://doi.org/10.1109/LPT.2004.839783
Publication status	Published - 2005 Feb
Externally published	Yes

Keywords

Ag
GaN
Indium tin oxide (ITO)
Light-emitting diode (LED)
Ohmic contact

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2004.839783

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@article{58c56728e4a44f4dad0c70c3b1073f16,

title = "Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts",

abstract = "We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1 nm)-ITO(200 nm) contacts exhibit greatly improved electrical characteristics when annealed at temperatures in the range 400 °C-600 °C for 1 min in air, yielding specific contact resistances of ∼10-4 Ω.cm2. In addition the contacts give transmittance of about 96% at 460 nm, which is far better than that of the conventionally used oxidized Ni-Au contacts. It is shown that the luminous intensity of blue LEDs fabricated with the Ag-ITO contacts is about three times higher than that of LEDs with oxidized Ni-Au contacts. This result strongly indicates that the Ag-ITO scheme can serve as a highly promising p-type ohmic contact for the realization of high brightness near ultraviolet LEDs.",

keywords = "Ag, GaN, Indium tin oxide (ITO), Light-emitting diode (LED), Ohmic contact",

author = "Song, {June O.} and Leem, {Dong Seok} and Kwak, {Joon Seop} and Y. Park and Chae, {S. W.} and Seong, {Tae Yeon}",

note = "Funding Information: Manuscript received May 7, 2004; revised August 25, 2004. This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation under Grant R01-2002-000-00 356-0. J. Song, D.-S. Leem, and T.-Y. Seong are with the Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea (e-mail: tyseong@gist.ac.kr). J. S. Kwak and Y. Park are with the Photonics Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, Korea. S. W. Chae is with the Discrete Semiconductor Division, Samsung ElectroMechanics Co. Ltd., Suwon 443-743, Korea. Digital Object Identifier 10.1109/LPT.2004.839783 Fig.1. TypicalI–V characteristicsoftheAg(1nm)–ITO(200nm)contactsas a function of the annealing temperature, measured between the TLM pads with a spacing of 4 m.",

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doi = "10.1109/LPT.2004.839783",

language = "English",

volume = "17",

pages = "291--293",

journal = "IEEE Photonics Technology Letters",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

AU - Song, June O.

AU - Leem, Dong Seok

AU - Kwak, Joon Seop

AU - Park, Y.

AU - Chae, S. W.

AU - Seong, Tae Yeon

N1 - Funding Information: Manuscript received May 7, 2004; revised August 25, 2004. This work was supported by the Basic Research Program of the Korea Science and Engineering Foundation under Grant R01-2002-000-00 356-0. J. Song, D.-S. Leem, and T.-Y. Seong are with the Department of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712, Korea (e-mail: tyseong@gist.ac.kr). J. S. Kwak and Y. Park are with the Photonics Laboratory, Samsung Advanced Institute of Technology, Suwon 440-600, Korea. S. W. Chae is with the Discrete Semiconductor Division, Samsung ElectroMechanics Co. Ltd., Suwon 443-743, Korea. Digital Object Identifier 10.1109/LPT.2004.839783 Fig.1. TypicalI–V characteristicsoftheAg(1nm)–ITO(200nm)contactsas a function of the annealing temperature, measured between the TLM pads with a spacing of 4 m.

PY - 2005/2

Y1 - 2005/2

N2 - We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1 nm)-ITO(200 nm) contacts exhibit greatly improved electrical characteristics when annealed at temperatures in the range 400 °C-600 °C for 1 min in air, yielding specific contact resistances of ∼10-4 Ω.cm2. In addition the contacts give transmittance of about 96% at 460 nm, which is far better than that of the conventionally used oxidized Ni-Au contacts. It is shown that the luminous intensity of blue LEDs fabricated with the Ag-ITO contacts is about three times higher than that of LEDs with oxidized Ni-Au contacts. This result strongly indicates that the Ag-ITO scheme can serve as a highly promising p-type ohmic contact for the realization of high brightness near ultraviolet LEDs.

AB - We have investigated Ag-indium tin oxide (ITO) scheme for obtaining high-quality p-type ohmic contacts for GaN-based light-emitting diodes (LEDs). The Ag(1 nm)-ITO(200 nm) contacts exhibit greatly improved electrical characteristics when annealed at temperatures in the range 400 °C-600 °C for 1 min in air, yielding specific contact resistances of ∼10-4 Ω.cm2. In addition the contacts give transmittance of about 96% at 460 nm, which is far better than that of the conventionally used oxidized Ni-Au contacts. It is shown that the luminous intensity of blue LEDs fabricated with the Ag-ITO contacts is about three times higher than that of LEDs with oxidized Ni-Au contacts. This result strongly indicates that the Ag-ITO scheme can serve as a highly promising p-type ohmic contact for the realization of high brightness near ultraviolet LEDs.

KW - Ag

KW - GaN

KW - Indium tin oxide (ITO)

KW - Light-emitting diode (LED)

KW - Ohmic contact

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DO - 10.1109/LPT.2004.839783

M3 - Article

AN - SCOPUS:13444261130

SN - 1041-1135

VL - 17

SP - 291

EP - 293

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 2

ER -

Improvement of the luminous intensity of light-emitting diodes by using highly transparent Ag-indium tin oxide p-type ohmic contacts

Abstract

Keywords

ASJC Scopus subject areas

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